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Recombination processes in midinfrared Al[sub x]In[sub 1−x]Sb light-emitting diodes
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Mirza, B. I., Nash, G. R., Smith, S. J., Buckle, L., Coomber, S. D., Emeny, M. T. and Ashley, Tim (2008) Recombination processes in midinfrared Al[sub x]In[sub 1−x]Sb light-emitting diodes. Journal of Applied Physics, Volume 104 (Number 6). Article number 063113. doi:10.1063/1.2982374 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.2982374
Abstract
Emission characteristics, spectral properties, and quantum efficiencies of AlxIn1−xSblight-emitting diodes, with aluminum compositions between 0% and 8.75%, have been investigated as a function of temperature from 25 to 300 K, and a function of current from 1 to 100 mA. As both current and temperature are varied a change in the dominant recombination mechanism is observed as indicated by changes in the measured emission. An analysis of the light-current characteristics shows that Auger processes become important in all devices at temperatures above 100 K, implying an activation energy of approximately 7–13 meV depending on the aluminum composition.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Journal of Applied Physics | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 26 September 2008 | ||||
Dates: |
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Volume: | Volume 104 | ||||
Number: | Number 6 | ||||
Article Number: | Article number 063113 | ||||
DOI: | 10.1063/1.2982374 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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