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Recombination processes in midinfrared Al[sub x]In[sub 1−x]Sb light-emitting diodes
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Mirza, B. I., Nash, G. R., Smith, S. J., Buckle, L., Coomber, S. D., Emeny, M. T. and Ashley, Tim (2008) Recombination processes in midinfrared Al[sub x]In[sub 1−x]Sb light-emitting diodes. Journal of Applied Physics, Volume 104 (Number 6). Article number 063113. doi:10.1063/1.2982374 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.2982374
Abstract
Emission characteristics, spectral properties, and quantum efficiencies of AlxIn1−xSblight-emitting diodes, with aluminum compositions between 0% and 8.75%, have been investigated as a function of temperature from 25 to 300 K, and a function of current from 1 to 100 mA. As both current and temperature are varied a change in the dominant recombination mechanism is observed as indicated by changes in the measured emission. An analysis of the light-current characteristics shows that Auger processes become important in all devices at temperatures above 100 K, implying an activation energy of approximately 7–13 meV depending on the aluminum composition.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
| Journal or Publication Title: | Journal of Applied Physics | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | 26 September 2008 | ||||
| Dates: |
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| Volume: | Volume 104 | ||||
| Number: | Number 6 | ||||
| Article Number: | Article number 063113 | ||||
| DOI: | 10.1063/1.2982374 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access |
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