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Temperature dependence of the electron Landé g factor in InSb and GaAs

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Litvinenko, K., Nikzad, L., Pidgeon, C., Allam, J., Cohen, L., Ashley, Tim, Emeny, M., Zawadzki, W. and Murdin, B. (2008) Temperature dependence of the electron Landé g factor in InSb and GaAs. Physical Review B (Condensed Matter and Materials Physics), Volume 77 (Number 3). Article number 033204. doi:10.1103/PhysRevB.77.033204 ISSN 1098-0121.

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Official URL: http://dx.doi.org/10.1103/PhysRevB.77.033204

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Abstract

We report Larmor precession in bulk InSb observed in the time domain from 77to300K. The optically oriented polarization precesses coherently even at 300K. The inferred Zeeman spin splitting is strongly nonparabolic, and the electron g factor (g∗) is in good agreement with k∙p theory (provided we take only the dilational contribution to the change in energy gap with temperature). We also show here that correct application of the 14-band k∙p model agrees with apparently anomalous trends previously reported for GaAs and confirm that the most widely quoted formula for g∗ in GaAs is incomplete.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: 29 January 2008
Dates:
DateEvent
29 January 2008Published
Volume: Volume 77
Number: Number 3
Article Number: Article number 033204
DOI: 10.1103/PhysRevB.77.033204
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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