Ashley, Tim, Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, A. W-H., Wallis, D. J. and Webber, P. J. (2009) High-performance InSb based quantum well field effect transistors for low-power dissipation applications. In: 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, 7-9 Dec 2009. Published in: 2009 IEEE International Electron Devices Meeting (IEDM) pp. 1-4. ISBN 9781424456390. doi:10.1109/IEDM.2009.5424207

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Abstract

Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of more than 250 GHz and power gain cut-off frequency (fmax) of 500 GHz. Outline designs confirm the potential for multi-stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title:	2009 IEEE International Electron Devices Meeting (IEDM)
Publisher:	IEEE
ISBN:	9781424456390
Book Title:	2009 IEEE International Electron Devices Meeting (IEDM)
Official Date:	2009
Dates:	Date Event 2009 Published
Page Range:	pp. 1-4
DOI:	10.1109/IEDM.2009.5424207
Status:	Not Peer Reviewed
Publication Status:	Published
Conference Paper Type:	Paper
Title of Event:	2009 IEEE International Electron Devices Meeting (IEDM)
Type of Event:	Other
Location of Event:	Baltimore, MD
Date(s) of Event:	7-9 Dec 2009

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