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High-performance InSb based quantum well field effect transistors for low-power dissipation applications
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Ashley, Tim, Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, A. W-H., Wallis, D. J. and Webber, P. J. (2009) High-performance InSb based quantum well field effect transistors for low-power dissipation applications. In: 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, 7-9 Dec 2009. Published in: 2009 IEEE International Electron Devices Meeting (IEDM) pp. 1-4. ISBN 9781424456390. doi:10.1109/IEDM.2009.5424207
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Official URL: http://dx.doi.org/10.1109/IEDM.2009.5424207
Abstract
Indium antimonide (InSb) has the highest electron mobility and saturation velocity of any conventional semiconductor, giving potential for a range of analogue and digital ultra-high speed, low power dissipation applications. N-channel quantum well FETs have been fabricated with current gain cut-off frequency (fT) of more than 250 GHz and power gain cut-off frequency (fmax) of 500 GHz. Outline designs confirm the potential for multi-stage low noise amplifiers operating at more than 200 GHz, for applications such as integrated passive millimetre wave imaging.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | 2009 IEEE International Electron Devices Meeting (IEDM) | ||||
Publisher: | IEEE | ||||
ISBN: | 9781424456390 | ||||
Book Title: | 2009 IEEE International Electron Devices Meeting (IEDM) | ||||
Official Date: | 2009 | ||||
Dates: |
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Page Range: | pp. 1-4 | ||||
DOI: | 10.1109/IEDM.2009.5424207 | ||||
Status: | Not Peer Reviewed | ||||
Publication Status: | Published | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 2009 IEEE International Electron Devices Meeting (IEDM) | ||||
Type of Event: | Other | ||||
Location of Event: | Baltimore, MD | ||||
Date(s) of Event: | 7-9 Dec 2009 |
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