(2008) High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications. In: IEEE International Electron Devices Meeting, 2008. IEDM 2008., San Francisco, CA, 15-17 Dec 2008. Published in: IEEE International Electron Devices Meeting, 2008. IEDM 2008. ISBN 9781424423774. doi:10.1109/IEDM.2008.4796798

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Request Changes to record.

Abstract

This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230 cm2/V-s. The shortest 40 nm gate length (LG) transistors achieve peak transconductance (Gm) of 510 muS/mum and cut-off frequency (fT) of 140 GHz at supply voltage of 0.5V. These represent the highest Gm and fT ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title:	IEEE International Electron Devices Meeting, 2008. IEDM 2008.
ISBN:	9781424423774
Book Title:	2008 IEEE International Electron Devices Meeting
Official Date:	2008
Dates:	Date Event 2008 Published
DOI:	10.1109/IEDM.2008.4796798
Status:	Not Peer Reviewed
Publication Status:	Published
Conference Paper Type:	Paper
Title of Event:	IEEE International Electron Devices Meeting, 2008. IEDM 2008.
Type of Event:	Other
Location of Event:	San Francisco, CA
Date(s) of Event:	15-17 Dec 2008

Request changes or add full text files to a record

Repository staff actions (login required)

View Item