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Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well

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Morrison, C., Myronov, Maksym, Foronda, Jamie, Casteleiro, Catarina, Halpin, John E., Rhead, S. D. and Leadley, D. R. (David R.) (2014) Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well. In: 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM), Singapore, 02-02 June 2014. Published in: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 2014 pp. 105-106. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874636

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Official URL: http://dx.doi.org/10.1109/ISTDM.2014.6874636

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Abstract

A high mobility (780,000 cm2/Vs) 2DHG has been created in a strained Ge quantum well structure, through B modulation doping. The mobility and carrier density were measured through Hall effect measurements at temperatures between 0.3 K and 300 K, revealing a low temperature carrier density of 2×1011cm-2. Low temperature magnetoresistance measurements show a complex, multiple frequency oscillatory behavior in the SdH oscillations for this modulation doped quantum well. This may be attributed to oscillations from carriers in other layers in the heterostructure superimposed on the oscillations due to transport in the quantum well, due to parallel conduction.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 2014
Publisher: IEEE
ISBN: 9781479954278
Book Title: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)
Official Date: 2014
Dates:
DateEvent
2014Published
Page Range: pp. 105-106
DOI: 10.1109/ISTDM.2014.6874636
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 7th International Silicon-Germanium Technology and Device Meeting (2014 ISTDM)
Type of Event: Conference
Location of Event: Singapore
Date(s) of Event: 02-02 June 2014
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