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Bi-induced band gap reduction in epitaxial InSbBi alloys
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Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Birkett, Michael Alexander, Alaria, Jonathan, Bomphrey, John James, Sallis, S., Piper, L. F. J., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) Bi-induced band gap reduction in epitaxial InSbBi alloys. Applied Physics Letters, Volume 105 (Number 21). Article number 212101. doi:10.1063/1.4902442 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.4902442
Abstract
The properties of molecular beam epitaxy-grown InSb 1− x Bi x alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ∼88 meV (14.1 μm) for InSb 0.976Bi0.024, a reduction of ∼35 meV/%Bi.
| Item Type: | Journal Article | ||||||||
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| Subjects: | Q Science > QC Physics | ||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry | ||||||||
| Library of Congress Subject Headings (LCSH): | Molecular beam epitaxy, Semiconductors | ||||||||
| Journal or Publication Title: | Applied Physics Letters | ||||||||
| Publisher: | American Institute of Physics | ||||||||
| ISSN: | 0003-6951 | ||||||||
| Official Date: | 24 November 2014 | ||||||||
| Dates: |
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| Volume: | Volume 105 | ||||||||
| Number: | Number 21 | ||||||||
| Article Number: | Article number 212101 | ||||||||
| DOI: | 10.1063/1.4902442 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 29 December 2015 | ||||||||
| Date of first compliant Open Access: | 29 December 2015 | ||||||||
| Funder: | University of Liverpool, Engineering and Physical Sciences Research Council (EPSRC), United States. Department of Energy. Office of Basic Energy Sciences (OBES), United States. Department of Energy, State University of New York | ||||||||
| Grant number: | EP/G004447/2 (EPSRC), EP/H021388/1 (EPSRC), DE-AC02-98CH10886 (DOE) |
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