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Fabrication and characterization of solution-processed methanofullerene-based organic field-effect transistors
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Singh, Th. B., Marjanović, N., Stadler, P., Auinger, Michael, Matt, G. J., Günes, S., Sariciftci, Niyazi Serdar, Schwödiauer, R. and Bauer, S. (2005) Fabrication and characterization of solution-processed methanofullerene-based organic field-effect transistors. Journal of Applied Physics, Volume 97 (Number 8). Article number 083714. doi:10.1063/1.1895466 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.1895466
Abstract
The fabrication and characterization of high-mobility, n-channel organic field-effect transistors (OFET) based on methanofullerene [6,6]-phenyl C61-butyric acid methyl ester using various organic insulators as gate dielectrics is presented. Gate dielectrics not only influence the morphology of the active semiconductor, but also the distribution of the localized states at the semiconductor-dielectric interface. Spin-coated organic dielectrics with very smooth surfaces provide a well-defined interface for the formation of high quality organic semiconductor films. The charge transport and mobility in these OFET devices strongly depend on the choice of the gate dielectric. The electron mobilities obtained are in the range of 0.05-0.2 cm2 V-1 s-1. Most of the OFETs fabricated using organic dielectrics exhibit an inherent hysteresis due to charge trapping at the semiconductor-dielectric interface. Devices with a polymeric electret as gate dielectric show a very large and metastable hysteresis in its transfer characteristics. The observed hysteresis is found to be temperature dependent and has been used to develop a bistable memory element.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > WMG (Formerly the Warwick Manufacturing Group) | ||||
Library of Congress Subject Headings (LCSH): | Field-effect transistors, Organic electronics | ||||
Journal or Publication Title: | Journal of Applied Physics | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 2005 | ||||
Dates: |
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Volume: | Volume 97 | ||||
Number: | Number 8 | ||||
Number of Pages: | 5 | ||||
Article Number: | Article number 083714 | ||||
DOI: | 10.1063/1.1895466 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Date of first compliant deposit: | 29 December 2015 | ||||
Date of first compliant Open Access: | 29 December 2015 |
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