The Library
Evidence of reduced self-heating in strained Si MOSFETs
Tools
UNSPECIFIED (2005) Evidence of reduced self-heating in strained Si MOSFETs. IEEE ELECTRON DEVICE LETTERS, 26 (9). pp. 684-686. doi:10.1109/LED.2005.854385 ISSN 0741-3106.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1109/LED.2005.854385
Abstract
Pulsed measurements are used to investigate self-heating in strained-Si MOSFETs. From analysis of the data at elevated temperatures, -the thermal resistances of the devices are extracted. These are found to be considerably lower than that obtained with a widely used theory. Thermal device simulations demonstrate that the discrepancy is due to an additional conduction path through the field oxide to overlapping aluminum contacts.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Journal or Publication Title: | IEEE ELECTRON DEVICE LETTERS | ||||
Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | ||||
ISSN: | 0741-3106 | ||||
Official Date: | September 2005 | ||||
Dates: |
|
||||
Volume: | 26 | ||||
Number: | 9 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 684-686 | ||||
DOI: | 10.1109/LED.2005.854385 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |