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Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm
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Dumas, D. C. S., Gallacher, Kevin, Rhead, Stephen, Myronov, Maksym, Leadley, D. R. (David R.) and Paul, Douglas J. (2014) Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm. Optics Express, Volume 22 (Number 16). 19284-19292 . doi:10.1364/OE.22.019284 ISSN 1094-4087.
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Official URL: http://dx.doi.org/10.1364/OE.22.019284
Abstract
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Optics Express | ||||
Publisher: | Optical Society of America | ||||
ISSN: | 1094-4087 | ||||
Official Date: | 2014 | ||||
Dates: |
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Volume: | Volume 22 | ||||
Number: | Number 16 | ||||
Page Range: | 19284-19292 | ||||
DOI: | 10.1364/OE.22.019284 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published |
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