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Bi flux-dependent MBE growth of GaSbBi alloys
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Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-244. doi:10.1016/j.jcrysgro.2015.02.093 ISSN 0022-0248.
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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.093
Abstract
The incorporation of Bi in GaSb1−xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate View the MathML source. The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0<x≤4.5%. The GaSbBi samples grown at the lowest Bi fluxes have smooth surfaces free of metallic droplets. The higher Bi flux samples have surface Bi droplets. The room temperature band gap of the GaSbBi epitaxial layers determined from optical absorption decreases linearly with increasing Bi content with a reduction of View the MathML source.
| Item Type: | Journal Article | ||||||
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| Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry | ||||||
| Library of Congress Subject Headings (LCSH): | Molecular beam epitaxy, X-rays -- Diffraction , Antimonides, Bismuth compounds, Gallium compounds, Semiconductors | ||||||
| Journal or Publication Title: | Journal of Crystal Growth | ||||||
| Publisher: | Elsevier BV | ||||||
| ISSN: | 0022-0248 | ||||||
| Official Date: | 1 September 2015 | ||||||
| Dates: |
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| Volume: | 425 | ||||||
| Page Range: | pp. 241-244 | ||||||
| DOI: | 10.1016/j.jcrysgro.2015.02.093 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||
| Date of first compliant deposit: | 16 December 2016 | ||||||
| Date of first compliant Open Access: | 16 December 2016 | ||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), United States. Department of Energy. Office of Basic Energy Sciences (OBES) | ||||||
| Grant number: | EP/G004447/2, EP/H021388/1 (EPSRC), E-AC02-05CH11231 (OBES) |
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