Kopaczek, Jan, Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). p. 112102. doi:10.1063/1.4895930 ISSN 0003-6951.

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Abstract

Molecular beam epitaxy is used to grow Ga1− y In y Sb1− x Bi x (y ≤ 5.5% and x ≤ 2.5%) and Al y Ga1− y Sb1− x Bi x alloys (y ≤ 6.6% and x ≤ 2.0%). The alloy composition and film thickness are determined by high resolution x-ray diffraction. The band gap of the alloys is determined by photomodulated reflectance (PR) spectroscopy. The band gap energy reduces with increasing In and Bi contents and decreasing Al content. The band gap energy reduction between 15 and 290 K is in the range of 60–75 meV, somewhat lower than the 82 meV for GaSb. The broadening of the band gap-related PR feature is between 16 and 28 meV.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Science > Chemistry
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	15 September 2014
Dates:	Date Event 15 September 2014 Published 16 September 2014 Available 4 September 2014 Accepted 30 July 2014 Submitted
Volume:	Volume 105
Number:	Number 11
Page Range:	p. 112102
DOI:	10.1063/1.4895930
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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