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Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys
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Kopaczek, Jan, Rajpalke, Mohana K., Linhart, W. M., Jones, T. S. (Tim S.), Ashwin, M. J., Kudrawiec, R. and Veal, T. D. (2014) Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys. Applied Physics Letters, Volume 105 (Number 11). p. 112102. doi:10.1063/1.4895930 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.4895930
Abstract
Molecular beam epitaxy is used to grow Ga1− y In y Sb1− x Bi x (y ≤ 5.5% and x ≤ 2.5%) and Al y Ga1− y Sb1− x Bi x alloys (y ≤ 6.6% and x ≤ 2.0%). The alloy composition and film thickness are determined by high resolution x-ray diffraction. The band gap of the alloys is determined by photomodulated reflectance (PR) spectroscopy. The band gap energy reduces with increasing In and Bi contents and decreasing Al content. The band gap energy reduction between 15 and 290 K is in the range of 60–75 meV, somewhat lower than the 82 meV for GaSb. The broadening of the band gap-related PR feature is between 16 and 28 meV.
Item Type: | Journal Article | ||||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry | ||||||||||
Journal or Publication Title: | Applied Physics Letters | ||||||||||
Publisher: | American Institute of Physics | ||||||||||
ISSN: | 0003-6951 | ||||||||||
Official Date: | 15 September 2014 | ||||||||||
Dates: |
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Volume: | Volume 105 | ||||||||||
Number: | Number 11 | ||||||||||
Page Range: | p. 112102 | ||||||||||
DOI: | 10.1063/1.4895930 | ||||||||||
Status: | Peer Reviewed | ||||||||||
Publication Status: | Published | ||||||||||
Access rights to Published version: | Restricted or Subscription Access |
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