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Clean wurtzite InN surfaces prepared with atomic hydrogen
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UNSPECIFIED (2005) Clean wurtzite InN surfaces prepared with atomic hydrogen. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 23 (4). pp. 617-620. doi:10.1116/1.1927108 ISSN 0734-2101.
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Official URL: http://dx.doi.org/10.1116/1.1927108
Abstract
Conventional methods of surface preparation for III-V semiconductors, such as thermal annealing and sputtering, are severely limited for InN, resulting in In-enrichment and the introduction of donorlike defects. This is explained in terms of the unusually low F-point conduction band minimum of InN with respect to,its Fermi stabilization energy. Here, low energy atomic hydrogen irradiation is used to produce clean wurtzite InN surfaces without such detrimental effects. A combination of x-ray photoelectron spectroscopy (XPS) and high-resolution electron-energy-loss spectroscopy was used to confirm the removal of atmospheric contaminants. Low energy electron diffraction revealed a (I X 1) surface reconstruction after cleaning. Finally, XPS revealed In/N intensity ratios consistent with a predominantly In polarity InN film terminated by In-adlayers in analogy with c-plane GaN{0001}-(1 X 1) surfaces. (c) 2005American Vacuum Society.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | ||||
Publisher: | A V S AMER INST PHYSICS | ||||
ISSN: | 0734-2101 | ||||
Official Date: | July 2005 | ||||
Dates: |
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Volume: | 23 | ||||
Number: | 4 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 617-620 | ||||
DOI: | 10.1116/1.1927108 | ||||
Publication Status: | Published |
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