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High Bi content GaSbBi alloys
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Rajpalke, Mohana K., Linhart, W. M., Birkett, Michael Alexander, Yu, K. M., Alaria, Jonathan, Kopaczek, Jan, Kudrawiec, Robert, Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2014) High Bi content GaSbBi alloys. Journal of Applied Physics, Volume 116 (Number 4). 043511. doi:10.1063/1.4891217
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Official URL: http://dx.doi.org/10.1063/1.4891217
Abstract
The epitaxial growth, structural, and optical properties of GaSb 1– x Bi x alloys have been investigated. The Bi incorporation into GaSb is varied in the range 0 < x ≤ 9.6% by varying the growth rate (0.31–1.33 μm h−1) at two growth temperatures (250 and 275 °C). The Bi content is inversely proportional to the growth rate, but with higher Bi contents achieved at 250 than at 275 °C. A maximum Bi content of x = 9.6% is achieved with the Bi greater than 99% substitutional. Extrapolating the linear variation of lattice parameter with Bi content in the GaSbBi films enabled a zinc blende GaBi lattice parameter to be estimated of 6.272 Å. The band gap at 300 K of the GaSbBi epitaxial layers decreases linearly with increasing Bi content down to 410 ± 40 meV (3 μm) for x = 9.6%, corresponding to a reduction of ∼35 meV/%Bi. Photoluminescence indicates a band gap of 490 ± 5 meV at 15 K for x = 9.6%.
| Item Type: | Journal Article | ||||||||
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| Subjects: | Q Science > QC Physics | ||||||||
| Divisions: | Faculty of Science > Chemistry | ||||||||
| Library of Congress Subject Headings (LCSH): | Epitaxy, Bismuth alloys | ||||||||
| Journal or Publication Title: | Journal of Applied Physics | ||||||||
| Publisher: | American Institute of Physics | ||||||||
| ISSN: | 0021-8979 | ||||||||
| Official Date: | 25 July 2014 | ||||||||
| Dates: |
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| Volume: | Volume 116 | ||||||||
| Number: | Number 4 | ||||||||
| Number of Pages: | 5 | ||||||||
| Article Number: | 043511 | ||||||||
| DOI: | 10.1063/1.4891217 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Funder: | University of Liverpool, Engineering and Physical Sciences Research Council (EPSRC), Narodowe Centrum Nauki (NCN), United States. Department of Energy | ||||||||
| Grant number: | EP/G004447/2 (EPSRC), EP/H021388/1 (EPSRC), 2012/07/E/ST3/01742 (NCN), DE-AC02-05CH11231 (DoE) |
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