Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ran, Li and Mawby, P. A. (2014) Improved electrothermal ruggedness in SiC MOSFETs compared with silicon IGBTs. IEEE Transactions on Electron Devices, Volume 61 (Number 7). pp. 2278-2286. doi:10.1109/TED.2014.2323152 ISSN 0018-9383.

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Abstract

A 1.2-kV/24-A SiC-MOSFET and a 1.2-kV/30-A Si-Insulated gate bipolar transistor (IGBT) have been electrothermally stressed in unclamped inductive switching conditions at different ambient temperatures ranging from -25 °C to 125 °C. The devices have been stressed with avalanche currents at their rated currents and 40% higher. The activation of the parasitic bipolar junction transistor (BJT) during avalanche mode conduction results from the increased body resistance causing a voltage drop between the source and body, greater than the emitter-base voltage of the parasitic BJT. Because the BJT current and temperature relate through a positive feedback mechanism, thermal runaway results in the destruction of the device. It is shown that the avalanche power sustained before the destruction of the device increases as the ambient temperature decreases. SiC MOSFETs are shown to be able to withstand avalanche currents equal to the rated forward current at 25 °C, whereas IGBTs cannot sustain the same electrothermal stress. SiC MOSFETs are also shown to be capable of withstanding avalanche currents 40% above the rated forward current though only at reduced temperatures. An electrothermal model has been developed to explain the temperature dependency of the BJT latchup, and the results are supported by finite-element models.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH):	Bipolar transistors, Metal oxide semiconductor field-effect transistors, Insulated gate bipolar transistors
Journal or Publication Title:	IEEE Transactions on Electron Devices
Publisher:	IEEE
ISSN:	0018-9383
Official Date:	29 May 2014
Dates:	Date Event 29 May 2014 Published
Volume:	Volume 61
Number:	Number 7
Page Range:	pp. 2278-2286
DOI:	10.1109/TED.2014.2323152
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Date of first compliant deposit:	24 June 2016
Date of first compliant Open Access:	24 June 2016

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