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The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs
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Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2015) The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, Volume 62 (Number 1). pp. 163-171. doi:10.1109/TIE.2014.2326999 ISSN 0278-0046.
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Official URL: http://dx.doi.org/10.1109/TIE.2014.2326999
Abstract
Silicon carbide Schottky barrier diodes (SiC-SBDs) are prone to electromagnetic oscillations in the output characteristics. The oscillation frequency, peak voltage overshoot, and damping are shown to depend on the ambient temperature and the metal-oxide- semiconductor field-effect transistor (MOSFET) switching rate (dIDS/dt). In this paper, it is shown experimentally and theoretically that dIDS/dt increases with temperature for a given gate resistance during MOSFET turn-on and reduces with increasing temperature during turn-off. As a result, the oscillation frequency and peak voltage overshoot of the SiC-SBD increases with temperature during diode turn-off. This temperature dependence of the diode ringing reduces at higher dIDS/dt and increases at lower dIDS/dt. It is also shown that the rate of change of dIDS/dt with temperature (d2IDS/dtdT) is strongly dependent on RG and using fundamental device physics equations, this behavior is predictable. The dependence of the switching energy on dIDS/dt and temperature in 1.2-kV SiC-SBDs is measured over a wide temperature range (-75 °C to 200 °C). The diode switching energy analysis shows that the losses at low dIDS/dt are dominated by the transient duration and losses at high dIDS/dt are dominated by electromagnetic oscillations. The model developed and results obtained are important for predicting electromagnetic interference, reliability, and losses in SiC MOSFET/SBDs.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Diodes, Switching -- Silicon carbide -- heating, Metal oxide semiconductor field-effect transistors, Diodes, Schottky-barrier | ||||||
| Journal or Publication Title: | IEEE Transactions on Industrial Electronics | ||||||
| Publisher: | IEEE | ||||||
| ISSN: | 0278-0046 | ||||||
| Official Date: | January 2015 | ||||||
| Dates: |
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| Volume: | Volume 62 | ||||||
| Number: | Number 1 | ||||||
| Number of Pages: | 9 | ||||||
| Page Range: | pp. 163-171 | ||||||
| DOI: | 10.1109/TIE.2014.2326999 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Date of first compliant deposit: | 20 June 2016 | ||||||
| Date of first compliant Open Access: | 20 June 2016 | ||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) |
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