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Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon
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Rougieux, Fiacre E., Grant, Nicholas E., Barugkin, Chug, Macdonald, Daniel and Murphy, John D. (2015) Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon. IEEE Journal of Photovoltaics, 5 (2). pp. 495-498. doi:10.1109/JPHOTOV.2014.2367912
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Official URL: http://dx.doi.org/10.1109/JPHOTOV.2014.2367912
Abstract
A recombination active defect is found in as-grown high-purity floating zone n-type silicon wafers containing grown-in nitrogen. In order to identify the properties of the defect, injection dependent minority carrier lifetime measurements, secondary ion mass spectroscopy measurements, and photoluminescence lifetime imaging are performed. The lateral recombination center distribution varies greatly in a radially symmetric way, while the nitrogen concentration remains constant. The defect is shown to be deactivated through high temperature annealing and hydrogenation. We suggest that a nitrogen-intrinsic point defect complex may be responsible for the observed recombination.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Library of Congress Subject Headings (LCSH): | Photoluminescence | ||||
Journal or Publication Title: | IEEE Journal of Photovoltaics | ||||
Publisher: | IEEE | ||||
Official Date: | March 2015 | ||||
Dates: |
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Volume: | 5 | ||||
Number: | 2 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 495-498 | ||||
DOI: | 10.1109/JPHOTOV.2014.2367912 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Date of first compliant deposit: | 4 January 2016 | ||||
Date of first compliant Open Access: | 4 January 2016 | ||||
Funder: | Australian Research Council (ARC), Australian Renewable Energy Agency, Engineering and Physical Sciences Research Council (EPSRC) | ||||
Grant number: | EP/J01768X/2 (EPSRC) |
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