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Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects
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Segercrantz, Natalie, Makkonen, Ilja, Slotte, Jonatan, Kujala, Jan, Veal, T. D. (Tim D.), Ashwin, M. J. and Tuomisto, Filip (2015) Increased p-type conductivity in GaNxSb1−x, experimental and theoretical aspects. Journal of Applied Physics, 118 (8). pp. 1-9. 085708. doi:10.1063/1.4929751 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.4929751
Abstract
The large increase in the p-type conductivity observed when nitrogen is added to GaSb has been studied using positron annihilation spectroscopy and ab initio calculations. Doppler broadening measurements have been conducted on samples of GaN x Sb 1− x layers grown by molecular beam epitaxy, and the results have been compared with calculated first-principle results corresponding to different defect structures. From the calculated data, binding energies for nitrogen-related defects have also been estimated. Based on the results, the increase in residual hole concentration is explained by an increase in the fraction of negative acceptor-type defects in the material. As the band gap decreases with increasing N concentration, the ionization levels of the defects move closer to the valence band. Ga vacancy-type defects are found to act as positron trapping defects in the material, and the ratio of Ga vacancy-type defects to Ga antisites is found to be higher than that of the p-type bulk GaSb substrate. Beside Ga vacancies, the calculated results imply that complexes of a Ga vacancy and nitrogen could be present in the material.
| Item Type: | Journal Article | ||||||||
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| Subjects: | Q Science > QC Physics | ||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
| Library of Congress Subject Headings (LCSH): | Doped semiconductors | ||||||||
| Journal or Publication Title: | Journal of Applied Physics | ||||||||
| Publisher: | American Institute of Physics | ||||||||
| ISSN: | 0021-8979 | ||||||||
| Official Date: | 17 August 2015 | ||||||||
| Dates: |
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| Volume: | 118 | ||||||||
| Number: | 8 | ||||||||
| Number of Pages: | 9 | ||||||||
| Page Range: | pp. 1-9 | ||||||||
| Article Number: | 085708 | ||||||||
| DOI: | 10.1063/1.4929751 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 31 December 2015 | ||||||||
| Date of first compliant Open Access: | 31 December 2015 |
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