The Library
Analysis of surface defects in Si1−yCyepilayers formed by the oversaturation of carbon
Tools
Colston, Gerard B., Myronov, Maksym, Rhead, Stephen and Leadley, D. R. (David R.) (2015) Analysis of surface defects in Si1−yCyepilayers formed by the oversaturation of carbon. Semiconductor Science and Technology, 30 (11). 114003. doi:10.1088/0268-1242/30/11/114003 ISSN 0268-1242.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1088/0268-1242/30/11/114003
Abstract
Strained Si1−y C y epilayers have been grown on Si (001) by reduced pressure chemical vapor deposition, using low-cost precursors disilane and trimethylsilane. Substitutional C incorporation has been achieved in strained epilayers up to y = 1.5%, while higher C content of at least 2.4% is observed in relaxed layers. These results are comparable to the highest concentrations achieved using more highly reactive, but expensive, precursors. These relatively high C content epilayers were found to form defects throughout growth attributed to the clustering of C adatoms, which result in localized accelerated amorphous growth and, consequently, hillocks forming on the epilayer surface. The formation, size and distribution of these surface defects has been analyzed through the use of various microscopic techniques. The size and density of these structural defects increases with both C content and epilayer thickness. In our layers of fixed growth time, substitutional C compositions above 1.5% causes hillocks to fuse on the surface; subsequently amorphous growth occurs, which forms an amorphous layer over the crystalline Si1−y C y epilayer and hence prevents further epitaxy or reliable device fabrication. The results of this investigation suggest that substitutional C composition of below 1.5% could be achieved without the need for expensive and volatile precursors or complex growth processes, assuming sufficiently thin layers are grown.
Item Type: | Journal Article | ||||||||
---|---|---|---|---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
Journal or Publication Title: | Semiconductor Science and Technology | ||||||||
Publisher: | Institute of Physics Publishing Ltd. | ||||||||
ISSN: | 0268-1242 | ||||||||
Official Date: | 15 October 2015 | ||||||||
Dates: |
|
||||||||
Volume: | 30 | ||||||||
Number: | 11 | ||||||||
Article Number: | 114003 | ||||||||
DOI: | 10.1088/0268-1242/30/11/114003 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |