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Robustness and balancing of parallel connected power devices : SiC vs. CoolMOS
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Hu, Ji, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Alexakis, Petros, Ran, Li and Mawby, P. A. (2016) Robustness and balancing of parallel connected power devices : SiC vs. CoolMOS. IEEE Transactions on Industrial Electronics, 63 (4). pp. 2092-2102. doi:10.1109/TIE.2015.2500187 ISSN 0278-0046.
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WRAP-robustness-balancing-parallel-connected-power-Ortiz-Gonzalez-Mawby-2016.pdf - Accepted Version - Requires a PDF viewer. Download (6Mb) | Preview |
Official URL: http://dx.doi.org/10.1109/TIE.2015.2500187
Abstract
Differences in the thermal and electrical switching time constants between parallel connected devices cause imbalances in the power and temperature distribution thereby reducing module robustness. In this paper, the impact of electro-thermal variations (gate and thermal resistance) between parallel connected devices on module robustness is investigated for 900V-CoolMOS and 1.2kV-SiC MOSFETs under clamped inductive switching (CIS) and unclamped inductive switching (UIS). Under CIS, the difference in the steady-state junction temperature (ΔTJ) and switching energy (ΔESW) between the parallel connected devices for a given difference in the gate and thermal resistance (ΔRG & ΔRTH) is used as the metric for determining robustness to electrothermal variations i.e. how well the devices maintain uniform temperature in-spite of switching with different rates and thermal resistances. Under UIS conditions, the change in the maximum avalanche current/energy prior to device failure as a function of the ΔTJ and ΔRG between the parallel connected devices is used as the metric. Under both CIS and UIS, SiC devices show better performance with minimal negative response to electrothermal variations between the parallel connected devices. Finite element models have also been performed showing the dynamics of BJT latch-up during UIS for the different technologies.
| Item Type: | Journal Article | ||||||||
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
| Journal or Publication Title: | IEEE Transactions on Industrial Electronics | ||||||||
| Publisher: | IEEE | ||||||||
| ISSN: | 0278-0046 | ||||||||
| Official Date: | April 2016 | ||||||||
| Dates: |
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| Volume: | 63 | ||||||||
| Number: | 4 | ||||||||
| Page Range: | pp. 2092-2102 | ||||||||
| DOI: | 10.1109/TIE.2015.2500187 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Reuse Statement (publisher, data, author rights): | © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 25 November 2019 | ||||||||
| Date of first compliant Open Access: | 25 November 2019 | ||||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||||||
| Grant number: | EP/K034804/1 |
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