The Library
Reduced 1/f noise at 293K in 0.55 mu m p-Si0.3Ge0.7 hetero-MOSFETs
Tools
UNSPECIFIED (2003) Reduced 1/f noise at 293K in 0.55 mu m p-Si0.3Ge0.7 hetero-MOSFETs. In: 33rd European Solid-State Device Research Conference, ESTORIL, PORTUGAL, SEP 16-18, 2003. Published in: ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE pp. 275-277. ISBN 0-7803-7999-3.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Abstract
For the first time, we have demonstrated reduced 1/f, low-frequency (LF), noise in sub-mum metamorphic high Ge content p-Si0.3Ge0.7 MOSFETs at 293K. Three times lower LF noise over 1-100 Hz range at V-DS = - 50 mV and V-G - V-th = - 1.5 V was measured for a 0.55 mum effective gate length p-Si0.3Ge0.7 MOSFET compared with p-Si MOSFET. Performed quantitative analysis demonstrates the importance of carrier number fluctuations (CNF) and correlated mobility fluctuations (CMF) components of I If noise for p-Si surface channel MOSFET, and absence of CMF for P-Si0.3Ge0.7 buried channel MOSFETs.
Item Type: | Conference Item (UNSPECIFIED) | ||||
---|---|---|---|---|---|
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
||||
Journal or Publication Title: | ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | ||||
Publisher: | IEEE | ||||
ISBN: | 0-7803-7999-3 | ||||
Editor: | Franca, J and Freitas, P | ||||
Official Date: | 2003 | ||||
Dates: |
|
||||
Number of Pages: | 3 | ||||
Page Range: | pp. 275-277 | ||||
Publication Status: | Published | ||||
Title of Event: | 33rd European Solid-State Device Research Conference | ||||
Location of Event: | ESTORIL, PORTUGAL | ||||
Date(s) of Event: | SEP 16-18, 2003 |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |