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Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
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Seoane, N., Indalecio, G., Aldegunde, Manuel, Nagy, Daniel, Elmessary, Muhammad A., Garcia-Loureiro, Antonio J. and Kalna, Karol (2016) Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs. IEEE Transactions on Electron Devices, 63 (3). pp. 1209-1215. doi:10.1109/TED.2016.2516921 ISSN 0018-9383.
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Official URL: http://dx.doi.org/10.1109/TED.2016.2516921
Abstract
The fin-edge roughness (FER) and the TiN metal grain work function (MGW)-induced variability affecting OFF and ON device characteristics are studied and compared between a 10.4 nm gate length In0.53Ga0.47As FinFET and a 10.7 nm gate length Si FinFET. We have analyzed the impact of variability by assessing five figures of merit (threshold voltage, subthreshold slope, OFF-current, drain-induced-barrier-lowering, and ON-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the subthreshold region while, in the ON-region, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In0.53Ga0.47As FinFET is more resilient to the FER and MGW variability in the subthreshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In0.53Ga0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In0.53Ga0.47As FinFET than for the Si counterpart, respectively.
Item Type: | Journal Article | ||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductors, Complementary, Metal semiconductor field-effect transistors, Transistors -- Research, Electronic circuits -- Testing | ||||||
Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||||
Publisher: | IEEE | ||||||
ISSN: | 0018-9383 | ||||||
Official Date: | March 2016 | ||||||
Dates: |
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Volume: | 63 | ||||||
Number: | 3 | ||||||
Number of Pages: | 7 | ||||||
Page Range: | pp. 1209-1215 | ||||||
DOI: | 10.1109/TED.2016.2516921 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 4 March 2016 | ||||||
Date of first compliant Open Access: | 4 March 2016 | ||||||
Funder: | Universidad de Santiago de Compostela (USC), Spain. Ministerio de EconomÃa y Competitividad [Ministry of Economy and Competitiveness] (MINECO), Engineering and Physical Sciences Research Council (EPSRC) | ||||||
Grant number: | TEC2014-59402-JIN (USC), TIN2013-41129-P (MINECO), EP/I010084/1 (EPSRC) |
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