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Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices
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Jahdi, Saeed, Alatise, Olayiwola M., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices. In: Energy Conversion Congress and Exposition (ECCE), 2015 IEEE, 20-24 Sept 2015, Montreal, QC. Published in: 2015 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 2239-2246. ISBN 9781467371513. doi:10.1109/ECCE.2015.7309975 ISSN 2329-3721.
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Official URL: http://dx.doi.org/10.1109/ECCE.2015.7309975
Abstract
The temperature and dV/dt dependence of false turn-ON has been analyzed for Silicon Carbide (SiC) Unipolar and Silicon Bipolar transistors, with switching rates varied by the gate resistances while temperature is varied by a hot plate connected to power modules. Self-heating is also investigated by measuring the temperature rise of the modules at high switching frequencies (8 kHz). This has resulted in continuous false turn-on occurrence in the device which has increased the device junction temperature significantly due to the repetitive shoot-through energy. Temperature rises of up to 150°C within just a few minutes have been observed as a result of repetitive shoot-through currents at high frequencies. To understand the impact of different mitigation techniques, the temperature rise is also observed after applying the corrections. It is seen that using the correction methods in the devices reduces the temperature rise significantly and therefore is vital for the applications of both Silicon and SiC devices.
Item Type: | Conference Item (Lecture) | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Silicon carbide, Temperature measurements, Electronic circuit design, Power transistors, Insulated gate bipolar transistors | ||||
Journal or Publication Title: | 2015 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||
Publisher: | IEEE | ||||
ISBN: | 9781467371513 | ||||
ISSN: | 2329-3721 | ||||
Official Date: | 29 October 2015 | ||||
Dates: |
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Page Range: | pp. 2239-2246 | ||||
DOI: | 10.1109/ECCE.2015.7309975 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Reuse Statement (publisher, data, author rights): | © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Date of first compliant deposit: | 14 January 2022 | ||||
Date of first compliant Open Access: | 14 January 2022 | ||||
Conference Paper Type: | Lecture | ||||
Title of Event: | Energy Conversion Congress and Exposition (ECCE), 2015 IEEE | ||||
Type of Event: | Conference | ||||
Location of Event: | 20-24 Sept 2015 | ||||
Date(s) of Event: | Montreal, QC |
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