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Analysis of power device failure under avalanche mode conduction
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Alexakis, Petros, Alatise, Olayiwola M., Hu, Ji, Jahdi, Saeed, Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) Analysis of power device failure under avalanche mode conduction. In: Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, Seoul, South Korea, 1-5 Jun 2015. Published in: 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) pp. 1833-1839. ISBN 9788957082546. doi:10.1109/ICPE.2015.7168028 ISSN 2150-6078 .
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WRAP-analysis-power-device-failure-under-avalanche-mode-conduction-Jahdi-2015.pdf - Accepted Version - Requires a PDF viewer. Download (4Mb) | Preview |
Official URL: http://dx.doi.org/10.1109/ICPE.2015.7168028
Abstract
This paper investigates the physics of device failure during avalanche for 1.2 kV SiC MOSFETs, silicon MOSFETs and silicon IGBTs. The impact of ambient temperature, initial conditions of the device prior to avalanche breakdown and the avalanche duration is explored for the different technologies. Two types of tests were conducted namely (i) constant avalanche duration with different peak avalanche currents and (ii) constant peak avalanche current with different avalanche durations. SiC MOSFETs are shown to be the most rugged technology followed by the silicon IGBT and the silicon MOSFET. The material properties of SiC suppress the triggering of the parasitic BJT that causes thermal runaway during avalanche.
| Item Type: | Conference Item (Lecture) | |||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | |||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Power electronics, Silicon carbide, Metal oxide semiconductor field-effect transistors, Electronic circuit design, Semiconductors -- Reliability, Insulated gate bipolar transistors, Temperature measurements | |||||||||
| Journal or Publication Title: | 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) | |||||||||
| Publisher: | IEEE | |||||||||
| ISBN: | 9788957082546 | |||||||||
| ISSN: | 2150-6078 | |||||||||
| Official Date: | 30 July 2015 | |||||||||
| Dates: |
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| Page Range: | pp. 1833-1839 | |||||||||
| DOI: | 10.1109/ICPE.2015.7168028 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Reuse Statement (publisher, data, author rights): | © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | |||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||
| Date of first compliant deposit: | 13 January 2022 | |||||||||
| Date of first compliant Open Access: | 13 January 2022 | |||||||||
| RIOXX Funder/Project Grant: |
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| Conference Paper Type: | Lecture | |||||||||
| Title of Event: | Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on | |||||||||
| Type of Event: | Conference | |||||||||
| Location of Event: | Seoul, South Korea | |||||||||
| Date(s) of Event: | 1-5 Jun 2015 |
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