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Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients
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Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2014) Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 2817-2823. ISBN 9781479957767. doi:10.1109/ECCE.2014.6953780 ISSN 2329-3721 .
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Official URL: http://dx.doi.org/10.1109/ECCE.2014.6953780
Abstract
Schottky diodes are known to have lower conduction and switching losses compared to PiN diodes, however, are prone to ringing in the output characteristics. In this paper, analytical models have been developed to calculate the turn-off switching energy of SiC Schottky and silicon PiN diodes. The models account for the reverse recovery current and diode voltage overshoot in the case of the PiN diode as well as the output oscillations for the Schottky diodes. PiN diodes during turn-off exhibit significant reverse current which increases with the switching rate and temperature whereas Schottky diodes exhibit output oscillations due to RLC resonance in the circuit. By combining these models with thermal networks derived from transient thermal impedance curves of the diodes, a fast and accurate method of predicting the temperature transient for different switching frequencies and electrical time constants has been developed. These models can be used by application engineers to predict the energy dissipation when designing converters and can take account of temperature and switching rate dependencies of the diodes.
Item Type: | Conference Item (Paper) | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Library of Congress Subject Headings (LCSH): | Diodes, Switching -- Silicon carbide -- heating, PIN diodes -- Mathematical models, Temperature measurements | ||||
Journal or Publication Title: | 2014 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||
Publisher: | IEEE | ||||
ISBN: | 9781479957767 | ||||
ISSN: | 2329-3721 | ||||
Book Title: | 2014 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||
Official Date: | 13 November 2014 | ||||
Dates: |
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Page Range: | pp. 2817-2823 | ||||
DOI: | 10.1109/ECCE.2014.6953780 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Reuse Statement (publisher, data, author rights): | © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Date of first compliant deposit: | 13 January 2022 | ||||
Date of first compliant Open Access: | 13 January 2022 | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | Energy Conversion Congress and Exposition (ECCE), 2014 IEEE | ||||
Type of Event: | Conference | ||||
Location of Event: | Pittsburgh, PA | ||||
Date(s) of Event: | 14-18 Sep 2014 |
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