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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
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UNSPECIFIED (2004) High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 19 (10). L106-L109. ISSN 0268-1242.
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Abstract
Strained Ge p-channel heterostructures have been realized by hybrid-epitaxial growth. Strain-tuning Si0.4Ge0.6 virtual substrates were grown by ultra-high vacuum chemical vapour deposition and active layers' were deposited by solid-source molecular beam epitaxy at low temperature. Following ex situ annealing, Hall effect measurements revealed a hole mobility of 1900 cm(2) V-1 s(-1) at 300 K (27 000 cm(2) V-1 s(-1) at 10 K), with a density of 1.8 x 10(12) cm(-2), giving a conductance in excess of current Ge heterostructures. Using a maximum-entropy mobility-spectrum analysis, 1.0 x 10(12) cm(-2) of these holes were found to have a mobility of 2700 cm(2) V-1 s(-1) at 300 K.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0268-1242 | ||||
Official Date: | October 2004 | ||||
Dates: |
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Volume: | 19 | ||||
Number: | 10 | ||||
Number of Pages: | 4 | ||||
Page Range: | L106-L109 | ||||
Publication Status: | Published |
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