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Low-energy nitrogen ion implantation of InSb
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UNSPECIFIED (2004) Low-energy nitrogen ion implantation of InSb. JOURNAL OF APPLIED PHYSICS, 96 (9). pp. 4935-4938. doi:10.1063/1.1792390 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.1792390
Abstract
The modification of the electronic properties of InSb by implantation of low-energy N-2(+) ions and annealing have been investigated. A non-uniform electron density depth profile is observed in the near-surface region. Detailed measurements of the conduction-band electron-plasma frequency as a function of temperature combined with carrier statistics reveal that the electron concentration profile in the near-surface region cannot be explained solely by donor-type defects induced by the nitrogen implantation. However, these experimental observations can readily be explained in terms of InNxSb1-x band structure, the different distributions of damage-induced donor defects, and the acceptor-type nitrogen. (C) 2004 American Institute of Physics.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | JOURNAL OF APPLIED PHYSICS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 1 November 2004 | ||||
Dates: |
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Volume: | 96 | ||||
Number: | 9 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 4935-4938 | ||||
DOI: | 10.1063/1.1792390 | ||||
Publication Status: | Published |
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