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Hydrogenation effect on low temperature internal gettering in multicrystalline silicon

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Al-Amin, Mohammad and Murphy, John D. (2016) Hydrogenation effect on low temperature internal gettering in multicrystalline silicon. In: 43rd IEEE Photovoltaic Specialists Conference, Portland, Oregon, USA, 5-10 Jun 2016. Published in: Proceedings of the 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) 0585-0590. ISBN 9781509027255.

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Official URL: http://dx.doi.org/10.1109/PVSC.2016.7749664

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Abstract

We have performed a comprehensive study into low temperature ( 500 °C) internal gettering in multicrystalline silicon (mc-Si). Two groups of as-grown mc-Si wafers from different ingot height positions were subjected to the same thermal treatments with surface passivation by either silicon nitride (SiNx:H) or a temporary iodine-ethanol (I-E) chemical solution . With either passivation scheme, lifetime in the relatively low lifetime samples from the bottom of the ingot improves substantially. There are however key passivation-dependent differences in behavior in other parts of the ingot. Lifetime in relatively good wafers from the middle of the ingot is improved significantly with silicon nitride passivation but not with iodine-ethanol, for which substantial reductions in lifetime initially occur. There are also key differences in the internal gettering behavior of bulk iron. We suggest the differences arise because silicon nitride introduces hydrogen into the bulk, whereas the iodine-ethanol does not.

Item Type: Conference Item (Paper)
Subjects: Q Science > QD Chemistry
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Hydrogenation, Silicon, Getters
Journal or Publication Title: Proceedings of the 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Publisher: IEEE
ISBN: 9781509027255
Official Date: 21 November 2016
Dates:
DateEvent
21 November 2016Available
3 June 2016Accepted
Page Range: 0585-0590
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 7 June 2016
Date of first compliant Open Access: 28 November 2016
Funder: Engineering and Physical Sciences Research Council (EPSRC), Royal Society (Great Britain), Royal Academy of Engineering (Great Britain)
Grant number: EP/J01768X/2, EP/M024911/1 (EPSRC) RG100076 Royal Society (Great Britain)
Conference Paper Type: Paper
Title of Event: 43rd IEEE Photovoltaic Specialists Conference
Type of Event: Conference
Location of Event: Portland, Oregon, USA
Date(s) of Event: 5-10 Jun 2016
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