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High temperature nitridation of 4H-SiC MOSFETs
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Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) High temperature nitridation of 4H-SiC MOSFETs. Materials Science Forum, 858 . pp. 623-626. doi:10.4028/www.scientific.net/MSF.858.623 ISSN 1662-9752.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.8...
Abstract
This paper presents and analyse the experimental results of 4H-SiC(0001) lateral MOSFETs and MOS capacitors with gate oxides grown directly in N2O environment or in O2 ambient followed by a N2O post oxidation annealing process. Different nitridation temperatures of 1200°C, 1300°C, 1400°C and 1500°C have been investigated. Results have demonstrated that at high temperature (>1200°C) there is a significant improvement in the interface trap density (~1.5×1011 cm-2eV-1 at 0.2 eV) and field effect channel mobility (19 cm2/V.s) of 4H-SiC MOSFET compare with those at lower temperature (1×1012 cm-2eV-1 at 0.2 eV and 4 cm2/V.s). Among those nitridation temperatures, 1300°C has found to be the most effective in increasing the field effect channel mobility and reducing threshold voltage.
Item Type: | Journal Article | ||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Journal or Publication Title: | Materials Science Forum | ||||||
Publisher: | Trans Tech Publications Ltd. | ||||||
ISSN: | 1662-9752 | ||||||
Official Date: | May 2016 | ||||||
Dates: |
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Volume: | 858 | ||||||
Page Range: | pp. 623-626 | ||||||
DOI: | 10.4028/www.scientific.net/MSF.858.623 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access |
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