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Direct fabrication of functional ultrathin single-crystal nanowires from quasi-one-dimensional van der Waals crystals
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Liu, Xue, Liu, Jinyu, Antipina, Liubov Yu, Hu, Jin, Yue, Chunlei, Sánchez, Ana M., Sorokin, Pavel B., Mao, Zhiqiang and Wei, Jiang (2016) Direct fabrication of functional ultrathin single-crystal nanowires from quasi-one-dimensional van der Waals crystals. Nano Letters, 16 (10). pp. 6188-6195. doi:10.1021/acs.nanolett.6b02453 ISSN 1530-6984.
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Official URL: http://dx.doi.org/10.1021/acs.nanolett.6b02453
Abstract
Micromechanical exfoliation of two-dimensional (2D) van der Waals materials has triggered an explosive interest in 2D material research. The extension of this idea to 1D van der Waals materials, possibly opening a new arena for 1D material research, has not yet been realized. In this paper, we demonstrate that 1D nanowire with sizes as small as six molecular ribbons, can be readily achieved in the Ta2(Pd or Pt)3Se8 system by simple micromechanical exfoliation. Exfoliated Ta2Pd3Se8 nanowires are n-type semiconductors, whereas isostructural Ta2Pt3Se8 nanowires are p-type semiconductors. Both types of nanowires show excellent electrical switching performance as the channel material for a field-effect transistor. Low-temperature transport measurement reveals a defect level inherent to Ta2Pd3Se8 nanowires, which enables the observed electrical switching behavior at high temperature (above 140 K). A functional logic gate consisting of both n-type Ta2Pd3Se8 and p-type Ta2Pt3Se8 field-effect transistors has also been successfully achieved. By taking advantage of the high crystal quality derived from the parent van der Waals bulk compound, our findings about the exfoliated Ta2(Pd or Pt)3Se8 nanowires demonstrate a new pathway to access single-crystal 1D nanostructures for the study of their fundamental properties and the exploration of their applications in electronics, optoelectronics, and energy harvesting.
Item Type: | Journal Article | ||||||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||||
Library of Congress Subject Headings (LCSH): | Nanowires, Quasimolecules, Field-effect transistors | ||||||||||
Journal or Publication Title: | Nano Letters | ||||||||||
Publisher: | American Chemical Society | ||||||||||
ISSN: | 1530-6984 | ||||||||||
Official Date: | 12 October 2016 | ||||||||||
Dates: |
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Volume: | 16 | ||||||||||
Number: | 10 | ||||||||||
Page Range: | pp. 6188-6195 | ||||||||||
DOI: | 10.1021/acs.nanolett.6b02453 | ||||||||||
Status: | Peer Reviewed | ||||||||||
Publication Status: | Published | ||||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||||
Date of first compliant deposit: | 19 September 2016 | ||||||||||
Date of first compliant Open Access: | 19 September 2016 | ||||||||||
Funder: | United States. Department of Energy, Louisiana Board of Regents. Support Fund (BoRSF), Tulane University, Russia (Federation). Ministerstvo obrazovanii︠a︡ i nauki [Ministry of Education and Science], Moskovskiĭ gosudarstvennyĭ universitet im. M.V. Lomonosova [Moscow State University], Rossiĭskiĭ fond fundamentalʹnykh issledovaniĭ [Russian Foundation for Basic Research] (RFBR) | ||||||||||
Grant number: | DESC0014208 (DOE), LEQSF(2015-18)-RD-A-23 (BoRSF), No. 16-32- 60138 mol_а_dk (RFBR) | ||||||||||
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