Linhart, W. M., Rajpalke, M. K., Buckeridge, John, Murgatroyd, P. A. E., Bomphrey, John James, Alaria, J., Catlow, C. R. A., Scanlon, D. O., Ashwin, M. J. and Veal, T. D. (Tim D.) (2016) Band gap reduction in InNxSb1-x alloys : optical absorption, k · P modeling, and density functional theory. Applied Physics Letters, 109 (13). 132104. doi:10.1063/1.4963836 ISSN 0003-6951.

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Abstract

Using infrared absorption, the room temperature band gap of InSb is found to reduce from 174 (7.1 μm) to 85 meV (14.6 μm) upon incorporation of up to 1.13% N, a reduction of ∼79 meV/%N. The experimentally observed band gap reduction in molecular-beam epitaxial InNSb thin films is reproduced by a five band k ⋅· P band anticrossing model incorporating a nitrogen level, EN, 0.75 eV above the valence band maximum of the host InSb and an interaction coupling matrix element between the host conduction band and the N level of β = 1.80 eV. This observation is consistent with the presented results from hybrid density functional theory.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics T Technology > TS Manufactures
Divisions:	Faculty of Science, Engineering and Medicine > Science > Chemistry Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Alloys, Wide gap semiconductors, Conduction band, Nitrogen
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	29 September 2016
Dates:	Date Event 29 September 2016 Published 19 October 2016 Available 19 September 2016 Accepted 29 April 2016 Submitted
Volume:	109
Number:	13
Article Number:	132104
DOI:	10.1063/1.4963836
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Open Access (Creative Commons)
Date of first compliant deposit:	13 October 2016
Date of first compliant Open Access:	13 October 2016
Funder:	Engineering and Physical Sciences Research Council (EPSRC), Narodowe Centrum Nauki (NCN), Innovate UK
Grant number:	EP/G004447/2, P/K016288/1, EP/L000202/1 (EPSRC), 014/13/D/ST3/ 01947 (NCN)
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