Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Recombination via transition metals in solar silicon : the significance of hydrogen-metal reactions and lattice sites of metal atoms

Tools
- Tools
+ Tools

Mullins, J., Leonard, S., Markevich, V. P., Hawkins, I. D., Santos, P., Coutinho, J., Marinopoulos, A., Murphy, John D., Halsall, M. P. and Peaker, A. R. (2017) Recombination via transition metals in solar silicon : the significance of hydrogen-metal reactions and lattice sites of metal atoms. Physica Status Solidi A, 214 (7). 1700304. doi:10.1002/pssa.201700304 ISSN 1862-6300.

[img]
Preview
PDF
WRAP-recombination-transition-metals-lattice-Murphy-2017.pdf - Published Version - Requires a PDF viewer.
Available under License Creative Commons Attribution 4.0.

Download (1022Kb) | Preview
Official URL: http://doi.org/10.1002/pssa.201700304

Request Changes to record.

Abstract

The move towards lower cost sources of solar silicon has intensified efforts to investigate the possibilities of passivating or reducing the recombination activity caused by deep states associated with transition metals. This is particularly important for the case of the slow diffusing metals early in the periodic sequence which are not removed by conventional gettering. In this paper we examine reactions between hydrogen and transition metals and discuss the possibility of such reactions during cell processing. We analyse the case of hydrogenation of iron in p-type Si and show that FeH can form under non-equilibrium conditions. We consider the electrical activity of the slow diffusing metals Ti, V and Mo, how this is affected in the presence of hydrogen, and the stability of TM-H complexes formed. Finally we discuss recent experiments which indicate that resiting of some transition metals from the interstitial to substitutional site is possible in the presence of excess vacancies, leading to a reduction in recombination activity.

Item Type: Journal Article
Alternative Title:
Subjects: Q Science > QD Chemistry
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Silicones, Transition metals
Journal or Publication Title: Physica Status Solidi A
Publisher: Wiley-VCH Verlag GMBH
ISSN: 1862-6300
Official Date: 6 July 2017
Dates:
DateEvent
6 July 2017Published
14 June 2017Available
12 June 2017Available
16 May 2017Accepted
Volume: 214
Number: 7
Article Number: 1700304
DOI: 10.1002/pssa.201700304
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
Date of first compliant deposit: 13 June 2017
Date of first compliant Open Access: 13 June 2017
Funder: Engineering and Physical Sciences Research Council (EPSRC), Fundação para a Ciência e a Tecnologia (FCT), Horizon 2020 (European Commission) (H2020)
Grant number: EP/M024911/1 (EPSRC), PTDC/CTM-ENE/1973/2012, UID/CTM/50025/2013 (FCT)

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us