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A comparative study for profiling ultrathin boron layers in Si
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UNSPECIFIED (2003) A comparative study for profiling ultrathin boron layers in Si. CRYSTAL RESEARCH AND TECHNOLOGY, 38 (12). pp. 1037-1041. doi:10.1002/crat.200310132 ISSN 0232-1300.
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Official URL: http://dx.doi.org/10.1002/crat.200310132
Abstract
The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam epitaxy, are determined by the electrochemical capacitance-voltage (ECV) and the spreading resistance (SR) profiling techniques. Secondary ion mass spectrometry (SIMS) is employed as a base for the comparison of the results. It has been shown that, under carefully chosen conditions, both ECV and SR techniques are able to resolve ultrathin layers including a delta layer, however ECV match better with the results of SIMS than that of SR. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Journal or Publication Title: | CRYSTAL RESEARCH AND TECHNOLOGY | ||||
Publisher: | WILEY-V C H VERLAG GMBH | ||||
ISSN: | 0232-1300 | ||||
Official Date: | 2003 | ||||
Dates: |
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Volume: | 38 | ||||
Number: | 12 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 1037-1041 | ||||
DOI: | 10.1002/crat.200310132 | ||||
Publication Status: | Published |
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