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Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys

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Linhart, Wojciech M., Gladysiewicz, Marta, Kopaczek, Jan, Rajpalke, Mohana, Ashwin, M. J., Veal, Timothy David and Kudrawiec, Robert (2017) Indium-incorporation enhancement of photoluminescence properties of Ga(In)SbBi alloys. Journal of Physics D: Applied Physics, 50 (37). 375102. doi:10.1088/1361-6463/aa7e64 ISSN 0022-3727.

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Official URL: http://dx.doi.org/10.1088/1361-6463/aa7e64

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Abstract

Ga(In)SbBi alloys grown by molecular-beam epitaxy on GaSb substrates with up to 5.5% In and 1.8% Bi were studied by temperature- and power-dependent photoluminescence (PL) and compared to previous photoreflectance (PR) results. High energy (HE) and low energy (LE) PL peaks were observed and attributed respectively to Ga(In)SbBi bandgap-related emission and native acceptor-related emission. For GaSbBi below 100 K, the HE peak is at slightly lower energy than the bandgap determined from PR, indicating carrier localization. This phenomenon is significantly weaker in PL of GaInSbBi alloys, suggesting that the presence of indium improves the optical quality over that of GaSbBi.

Item Type: Journal Article
Subjects: T Technology > TN Mining engineering. Metallurgy
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Indium alloys, Gallium alloys, Bismuth alloys, Antimony alloys
Journal or Publication Title: Journal of Physics D: Applied Physics
Publisher: IOP Publishing
ISSN: 0022-3727
Official Date: 20 September 2017
Dates:
DateEvent
20 September 2017Published
7 July 2017Available
7 July 2017Accepted
Volume: 50
Number: 37
Article Number: 375102
DOI: 10.1088/1361-6463/aa7e64
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 13 July 2017
Date of first compliant Open Access: 7 July 2018
Funder: Narodowe Centrum Nauki [National Science Centre] (NCN), Engineering and Physical Sciences Research Council (EPSRC)
Grant number: 2013/10/E/ST3/00520, 2014/13/D/ST3/01947, 2015/17/N/ST3/02286 (NCN), EP/G004447/2 (EPSRC)

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