The Library
Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon
Tools
Tools
Tools
Al-Amin, Mohammad and Murphy, John D. (2017) Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon. IEEE Journal of Photovoltaics, 7 (6). 1519 -1527. doi:10.1109/JPHOTOV.2017.2741100 ISSN 2156-3381.
|
PDF
WRAP-Combining-low-temperature-phosphorus-gettering-Murphy-2017.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution. Download (1275Kb) | Preview |
Official URL: http://doi.org/10.1109/JPHOTOV.2017.2741100
Abstract
We have investigated low-temperature (≤500 °C) gettering in combination with phosphorus diffusion gettering with a view to improving poor quality multicrystalline silicon. Low-temperature gettering applied after standard phosphorus diffusion gettering is found to provide a >40% improvement in minority carrier lifetime in samples from the top and bottom of an ingot. The best results are achieved at 300 °C with very long annealing times (>24 h). Improvements in the lifetime do not correlate with changes in interstitial iron concentration. Experiments are performed to assess whether the presence of a phosphorus-diffused emitter affects low-temperature gettering, and results from sister samples show the low-temperature gettering behavior is not affected by the existence of an emitter. Further experiments show that low-temperature gettering prior to phosphorus diffusion results in a 20% higher lifetime after phosphorus diffusion. Low-temperature gettering can, therefore, enhance lifetime even when used in conjunction with standard phosphorus diffusion gettering.
| Item Type: | Journal Article | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
||||||||||||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||||||||
| Library of Congress Subject Headings (LCSH): | Phosphorus -- Diffusion rate, Phosphorus -- Effect of low temperatures on, Low temperatures, Getters, Silicon crystals | ||||||||||||||||||
| Journal or Publication Title: | IEEE Journal of Photovoltaics | ||||||||||||||||||
| Publisher: | IEEE | ||||||||||||||||||
| ISSN: | 2156-3381 | ||||||||||||||||||
| Official Date: | November 2017 | ||||||||||||||||||
| Dates: |
|
||||||||||||||||||
| Volume: | 7 | ||||||||||||||||||
| Number: | 6 | ||||||||||||||||||
| Page Range: | 1519 -1527 | ||||||||||||||||||
| DOI: | 10.1109/JPHOTOV.2017.2741100 | ||||||||||||||||||
| Status: | Peer Reviewed | ||||||||||||||||||
| Publication Status: | Published | ||||||||||||||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||||||||
| Date of first compliant deposit: | 24 October 2017 | ||||||||||||||||||
| Date of first compliant Open Access: | 24 October 2017 | ||||||||||||||||||
| Grant number: | |||||||||||||||||||
| RIOXX Funder/Project Grant: |
|
||||||||||||||||||
| Related URLs: |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
Downloads
Downloads per month over past year
