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Data for Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon
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Al-Amin, Mohammad and Murphy, John D. (2017) Data for Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon. [Dataset]
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Plain Text (Dataset documentation)
readme.txt Available under License Creative Commons Attribution 4.0. Download (718b) |
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Microsoft Excel (Data for Figures 2, 4, 5, 6, 8)
2017-08-16 Dataset for WRAP.xlsx Available under License Creative Commons Attribution 4.0. Download (41Kb) |
Official URL: https://wrap.warwick.ac.uk/91249/
Abstract
We have investigated low-temperature (≤500 °C) gettering in combination with phosphorus diffusion gettering with a view to improving poor quality multicrystalline silicon. Low-temperature gettering applied after standard phosphorus diffusion gettering is found to provide a >40% improvement in minority carrier lifetime in samples from the top and bottom of an ingot. The best results are achieved at 300 °C with very long annealing times (>24 h). Improvements in the lifetime do not correlate with changes in interstitial iron concentration. Experiments are performed to assess whether the presence of a phosphorus-diffused emitter affects low-temperature gettering, and results from sister samples show the low-temperature gettering behavior is not affected by the existence of an emitter. Further experiments show that low-temperature gettering prior to phosphorus diffusion results in a 20% higher lifetime after phosphorus diffusion. Low-temperature gettering can, therefore, enhance lifetime even when used in conjunction with standard phosphorus diffusion gettering.
Item Type: | Dataset | ||||||||||||||||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||||||||
Type of Data: | Experimental data | ||||||||||||||||||
Library of Congress Subject Headings (LCSH): | Phosphorus -- Diffusion rate, Phosphorus -- Effect of low temperatures on, Low temperatures, Getters, Silicon crystals | ||||||||||||||||||
Publisher: | University of Warwick, School of Engineering | ||||||||||||||||||
Official Date: | 18 August 2017 | ||||||||||||||||||
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Status: | Not Peer Reviewed | ||||||||||||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||||||||
Description: | The dataset (a single file in XLSX format) contains the data behind all the graphs presented in the paper. Each worksheet within the spreadsheet relates to a single figure in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper. Data for figures 2, 4, 5, 6, 8 with documentation. |
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