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Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling
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Chan, Chun Wa, Li, Fan, Sánchez, Ana M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. doi:10.1109/TED.2017.2719898 ISSN 0018-9383.
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Official URL: http://dx.doi.org/10.1109/TED.2017.2719898
Abstract
This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device architecture for the implementation of 600-V LDMOSFETs using junction isolation and dielectric isolation reduced surface electric field technologies for high-temperature operations up to 300 °C. Simulations are carried out for two Si/SiC transistors designed with either PN or silicon-on-insulator (SOI) and their equivalent structures employing bulk-Si or SOI substrates. Through comparisons, it is shown that the Si/SiC devices have the potential to operate with an offstate leakage current as low as the SOI device. However, the low-side resistance of the SOI LDMOSFET is smaller in value and less sensitive to temperature, outperforming both Si/SiC devices. Conversely, under high-side configurations, the Si/SiC transistors have resistances lower than that of the SOI at high substrate bias, and invariable with substrate potential up to −200 V, which behaves similar to the bulkSi LDMOS at 300 K. Furthermore, the thermal advantage of the Si/SiC over other structures is demonstrated by using a rectangle power pulse setup in Technology Computer-Aided design simulations.
| Item Type: | Journal Article | ||||||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Integrated circuits -- Effect of high temperatures on, Silicon carbide, Silicon-on-insulator technology, Semiconductors -- Materials | ||||||||||||
| Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||||||||||
| Publisher: | IEEE | ||||||||||||
| ISSN: | 0018-9383 | ||||||||||||
| Official Date: | 2017 | ||||||||||||
| Dates: |
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| Volume: | 64 | ||||||||||||
| Number: | 9 | ||||||||||||
| Page Range: | pp. 3713-3718 | ||||||||||||
| DOI: | 10.1109/TED.2017.2719898 | ||||||||||||
| Status: | Peer Reviewed | ||||||||||||
| Publication Status: | Published | ||||||||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||
| Date of first compliant deposit: | 5 September 2017 | ||||||||||||
| Date of first compliant Open Access: | 6 September 2017 | ||||||||||||
| Funder: | Royal Academy of Engineering (Great Britain), Horizon 2020 (European Commission) (H2020), Engineering and Physical Sciences Research Council (EPSRC) | ||||||||||||
| Grant number: | EP/N00647X/1 (EPSRC) | ||||||||||||
| RIOXX Funder/Project Grant: |
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