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Superacid-treated silicon surfaces : extending the limit of carrier lifetime for photovoltaic applications
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Grant, Nicholas E., Niewelt, Tim, Wilson, Neil R., Wheeler-Jones, Evé, Bullock, James, Al-Amin, Mohammad, Schubert, Martin C., van Veen, André C., Javey, Ali and Murphy, John D. (2017) Superacid-treated silicon surfaces : extending the limit of carrier lifetime for photovoltaic applications. IEEE Journal of Photovoltaics, 7 (6). pp. 1574-1583. doi:10.1109/JPHOTOV.2017.2751511 ISSN 2156-3381.
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Official URL: http://doi.org/10.1109/JPHOTOV.2017.2751511
Abstract
Minimizing carrier recombination at interfaces is of extreme importance in the development of high-efficiency photovoltaic devices and for bulk material characterization. Here, we investigate a temporary room temperature superacid-based passivation scheme, which provides surface recombination velocities below 1 cm/s, thus placing our passivation scheme amongst state-of-the-art dielectric films. Application of the technique to high-quality float-zone silicon allows the currently accepted intrinsic carrier lifetime limit to be reached and calls its current parameterization into doubt for 1 Ω·cm n-type wafers. The passivation also enables lifetimes up to 65 ms to be measured in high-resistivity Czochralski silicon, which, to our knowledge, is the highest ever measured in Czochralski-grown material. The passivation strategies developed in this work will help diagnose bulk lifetime degradation under solar cell processing conditions and also help quantify the electronic quality of new passivation schemes.
| Item Type: | Journal Article | |||||||||||||||
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| Subjects: | Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | |||||||||||||||
| Library of Congress Subject Headings (LCSH): | Superacids, Photovoltaic power generation, Silicon crystals | |||||||||||||||
| Journal or Publication Title: | IEEE Journal of Photovoltaics | |||||||||||||||
| Publisher: | IEEE | |||||||||||||||
| ISSN: | 2156-3381 | |||||||||||||||
| Official Date: | 3 October 2017 | |||||||||||||||
| Dates: |
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| Volume: | 7 | |||||||||||||||
| Number: | 6 | |||||||||||||||
| Page Range: | pp. 1574-1583 | |||||||||||||||
| DOI: | 10.1109/JPHOTOV.2017.2751511 | |||||||||||||||
| Status: | Peer Reviewed | |||||||||||||||
| Publication Status: | Published | |||||||||||||||
| Access rights to Published version: | Restricted or Subscription Access | |||||||||||||||
| Date of first compliant deposit: | 24 October 2017 | |||||||||||||||
| Date of first compliant Open Access: | 24 October 2017 | |||||||||||||||
| RIOXX Funder/Project Grant: |
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