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The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy
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Bomphrey, John James, Ashwin, M. J. and Jones, T. S. (Tim S.) (2015) The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy. Journal of Crystal Growth, 420 . pp. 1-5. doi:10.1016/j.jcrysgro.2015.03.025 ISSN 0022-0248.
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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2015.03.025
Abstract
We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum density of ~5.3×1010 cm−2. Using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) for the analysis of samples with InSb depositions of 1–6 ML equivalent thickness, we observe an apparent value for the critical thickness for InSb/GaSb (001) deposition of 2.3±0.3 ML, for the growth temperatures of 275 °C and 320 °C.
| Item Type: | Journal Article | ||||||||
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| Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry Faculty of Science, Engineering and Medicine > Science > Physics |
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| Library of Congress Subject Headings (LCSH): | Indium antimonide, Semiconductors, Molecular beam epitaxy | ||||||||
| Journal or Publication Title: | Journal of Crystal Growth | ||||||||
| Publisher: | Elsevier BV, North-Holland | ||||||||
| ISSN: | 0022-0248 | ||||||||
| Official Date: | 15 June 2015 | ||||||||
| Dates: |
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| Volume: | 420 | ||||||||
| Page Range: | pp. 1-5 | ||||||||
| DOI: | 10.1016/j.jcrysgro.2015.03.025 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 13 September 2017 | ||||||||
| Date of first compliant Open Access: | 13 September 2017 | ||||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||||||
| Grant number: | EP/F041160/1 |
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