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Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates
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Parsons, Jonathan, Morris, R. J. H., Leadley, D. R. (David R.), Parker, Evan H. C., Fulgoni, D. J. F. and Nash, Lee John (2008) Relaxation of strained silicon on Si0.5Ge0.5 virtual substrates. Applied Physics Letters, Vol.93 (No.7). 072108. doi:10.1063/1.2975188 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.2975188
Abstract
Strain relaxation has been studied in tensile strained silicon layers grown on Si0.5Ge0.5 virtual substrates, for layers many times the critical thickness, using high resolution x-ray diffraction. Layers up to 30 nm thick were found to relax less than 2% by the glide of preexisting 60° dislocations. Relaxation is limited because many of these dislocations dissociate into extended stacking faults that impede the dislocation glide. For thicker layers, nucleated microtwins were observed, which significantly increased relaxation to 14%. All these tensile strained layers are found to be much more stable than layers with comparable compressive strain.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Nucleation, Semiconductors, Strains and stresses, X-rays -- Diffraction, Silicon compounds | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 22 August 2008 | ||||
Dates: |
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Volume: | Vol.93 | ||||
Number: | No.7 | ||||
Page Range: | 072108 | ||||
DOI: | 10.1063/1.2975188 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | European Union (EU) | ||||
Grant number: | IST-506844 (EU) |
Data sourced from Thomson Reuters' Web of Knowledge
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