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Band anticrossing in GaNxSb1–x
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Jefferson, Paul Harvey, Veal, T. D. (Tim D.), Piper, L. F. J., Bennett, B. R., McConville, C. F. (Chris F.), Murdin, B. N., Buckle, L., Smith, G. W. and Ashley, T. (2006) Band anticrossing in GaNxSb1–x. Applied Physics Letters, Vol.89 (No.11). p. 111921. doi:10.1063/1.2349832 ISSN Band anticrossing in GaNxSb1–x.
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Official URL: http://dx.doi.org/10.1063/1.2349832
Abstract
Fourier transform infrared absorption measurements are presented from the dilute nitride semiconductor GaNSb with nitrogen incorporations between 0.2% and 1.0%. The divergence of transitions from the valence band to E– and E+ can be seen with increasing nitrogen incorporation, consistent with theoretical predictions. The GaNSb band structure has been modeled using a five-band k·p Hamiltonian and a band anticrossing fitting has been obtained using a nitrogen level of 0.78 eV above the valence band maximum and a coupling parameter of 2.6 eV.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Gallium compounds, Semiconductors, Fourier transform spectroscopy, Fourier transform infrared spectroscopy, Conduction band | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | Band anticrossing in GaNxSb1–x | ||||
Official Date: | 15 September 2006 | ||||
Dates: |
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Volume: | Vol.89 | ||||
Number: | No.11 | ||||
Page Range: | p. 111921 | ||||
DOI: | 10.1063/1.2349832 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
Grant number: | GR/R82630/01 (EPSRC), GR/S56030/01 (EPSRC) |
Data sourced from Thomson Reuters' Web of Knowledge
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