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Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers
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UNSPECIFIED (2003) Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers. IEE PROCEEDINGS-OPTOELECTRONICS, 150 (1). pp. 102-104. doi:10.1049/ip-opt:20030045 ISSN 1350-2433.
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Official URL: http://dx.doi.org/10.1049/ip-opt:20030045
Abstract
The electronic properties of epitaxial layers of InNxSb1-x grown oil GaAs (001) substrates have been investigated using high-resolution electron-energy-loss spectroscopy (HREELS), Hall measurements and band structure modelled by a modified k(.)p Hamiltonian. The chemical composition of the epitaxial layers was found to be InN0.02Sb0.98 from secondary ion mass spectrometry (SIMS). However, electrical measurements and band structure calculations indicate a band gap of 135 meV, thus entailing an epilayer composition of InN0.0015Sb0.9985, indicating that approxirriately 7.5% of the nitrogen present is electrically active, being located substitutionally on antimony lattice sites. Hall measurements and simulations of HREEL spectra imply a much larger effective mass at the Fermi level than a conventional Kane band structure material with an equivalent band gap.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Journal or Publication Title: | IEE PROCEEDINGS-OPTOELECTRONICS | ||||
Publisher: | IEE-INST ELEC ENG | ||||
ISSN: | 1350-2433 | ||||
Official Date: | February 2003 | ||||
Dates: |
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Volume: | 150 | ||||
Number: | 1 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 102-104 | ||||
DOI: | 10.1049/ip-opt:20030045 | ||||
Publication Status: | Published |
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