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Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers
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Palmer, M. J. (Martin J.), Braithwaite, Glyn, Grasby, T. J., Phillips, P. J. (Peter J.), Prest, M. J. (Martin J.), Parker, Evan H. C., Whall, Terry E., Parry, C. P., Waite, A. M., Evans, A. G. R., Roy, S. (Scott), Watling, J. R., Kaya, S. and Asenov, A. (Asen) (2001) Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, Vol.78 (No.10). pp. 1424-1426. doi:10.1063/1.1354662 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.1354662
Abstract
The room-temperature effective mobilities of pseudomorphic Si/Si0.64Ge0.36/Si p-metal-oxidesemiconductor field effect transistors are reported. The peak mobility in the buried SiGe channel increases with silicon cap thickness. It is argued that SiO2/Si interface roughness is a major source of scattering in these devices, which is attenuated for thicker silicon caps. It is also suggested that segregated Ge in the silicon cap interferes with the oxidation process, leading to increased SiO2/Si interface roughness in the case of thin silicon caps.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Germanium alloys, Silicon alloys, Semiconductors, Metal oxide semiconductor field-effect transistors, Electron mobility, Oxidation | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 5 March 2001 | ||||
Dates: |
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Volume: | Vol.78 | ||||
Number: | No.10 | ||||
Page Range: | pp. 1424-1426 | ||||
DOI: | 10.1063/1.1354662 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) |
Data sourced from Thomson Reuters' Web of Knowledge
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