Bonyadi, Yeganeh, Gammon, P. M., Bonyadi, Roozbeh, Shah, V. A., Fisher, C. A., Martin, David M. and Mawby, Philip A. (2016) Characterization of 4H-SiC PiN diodes formed on defects identified by PL imaging. Materials Science Forum, 858 . pp. 405-409. doi:10.4028/www.scientific.net/msf.858.405 ISSN 1662-9752.
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Abstract
In this paper the results of a study in which the surface quality of 30, 35 and 110 µm 4H-SiC epitaxial layers from different manufacturers are evaluated using AFM and photoluminescence (PL) imaging. PiN diodes are then intentionally fabricated on triangular defects and polytypes grains which are formed, in order to understand their impact on the resulting electrical characteristics, which includes on-state behaviour, turn-on characteristics and reverse leakage current behaviour. The results indicate that the defects form a high resistance short through the p-type anode. This results in higher leakage current, well over 108 times higher than the devices formed off-defect. PiN diodes fabricated on-defect also suffered from soft breakdown unlike those off-defect.
| Item Type: | Journal Article |
|---|---|
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering |
| SWORD Depositor: | Library Publications Router |
| Journal or Publication Title: | Materials Science Forum |
| Publisher: | Trans Tech Publications |
| ISSN: | 1662-9752 |
| Official Date: | 24 May 2016 |
| Dates: | Date Event 24 May 2016 Published 2 January 2016 Accepted |
| Volume: | 858 |
| Page Range: | pp. 405-409 |
| DOI: | 10.4028/www.scientific.net/msf.858.405 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| URI: | https://wrap.warwick.ac.uk/102096/ |
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