Number of items: 4.
Parsons, J., Beer, C. S., Leadley, D. R. (David R.), Capewell, Adam Daniel and Grasby, T. J.
(2008)
Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates.
Thin Solid Films, Vol.517
(No.1).
pp. 17-19.
doi:10.1016/j.tsf.2008.08.026
ISSN 0040-6090.
Parsons, J., Parker, Evan H. C., Leadley, D. R. (David R.), Morris, R. J. H. (Richard J. H.), Grasby, T. J. and Capewell, Adam Daniel
(2007)
Erratum: Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates [ Appl. Phys. Lett. 91, 063127 (2007) ].
Applied Physics Letters, Vol.91
(No.18).
ISSN 0003-6951
doi:10.1063/1.2798244
von Haartman, M., Malm, B. G., Hellstrรถm, P.-E., รstling, Mikael, Grasby, T. J., Whall, Terry E., Parker, Evan H. C., Lyutovich, K., Oehme, M. and Kasper, E.
(2007)
Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs.
Solid-State Electronics, Vol.51
(No.5).
pp. 771-777.
doi:10.1016/j.sse.2007.03.011
ISSN 0038-1101.
Norris, D. J., Cullis, A. G., Grasby, T. J. and Parker, Evan H. C.
(2000)
An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging.
In: Conference on Microscopy of Semiconducting Materials, Oxford, England, 22-25 Mar 1999. Published in: Microscopy of Semiconducting Materials: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK
(Number 164).
pp. 215-218.
ISBN 0750306505.
ISSN 0951-3248.
This list was generated on Wed Apr 24 09:03:55 2024 BST.