2008

Parsons, J., Beer, C. S., Leadley, D. R. (David R.), Capewell, Adam Daniel and Grasby, T. J. (2008) Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates. Thin Solid Films, Vol.517 (No.1). pp. 17-19. doi:10.1016/j.tsf.2008.08.026

2007

Parsons, J., Parker, Evan H. C., Leadley, D. R. (David R.), Morris, R. J. H. (Richard J. H.), Grasby, T. J. and Capewell, Adam Daniel (2007) Erratum: Misfit strain relaxation and dislocation formation in supercritical strained silicon on virtual substrates [ Appl. Phys. Lett. 91, 063127 (2007) ]. Applied Physics Letters, Vol.91 (No.18). doi:10.1063/1.2798244

von Haartman, M., Malm, B. G., Hellström, P.-E., Östling, Mikael, Grasby, T. J., Whall, Terry E., Parker, Evan H. C., Lyutovich, K., Oehme, M. and Kasper, E. (2007) Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs. Solid-State Electronics, Vol.51 (No.5). pp. 771-777. doi:10.1016/j.sse.2007.03.011

2000

Norris, D. J., Cullis, A. G., Grasby, T. J. and Parker, Evan H. C. (2000) An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energy-loss imaging. In: Conference on Microscopy of Semiconducting Materials, Oxford, England, 22-25 Mar 1999. Published in: Microscopy of Semiconducting Materials: 1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK (Number 164). pp. 215-218. ISBN 0750306505. ISSN 0951-3248.