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Jump to: AdvanSiC project, European Union's Horizon Europe programme | Advantage West Midlands (AWM) | Birmingham Science City | Engineering and Physical Sciences Research Council (EPSRC) | European Commission (EC) | European Regional Development Fund (ERDF) | European Research Council (ERC) | European Union (EU) | Great Britain. Dept. of Trade and Industry (DTI) | Horizon 2020 (European Commission) (H2020) | Royal Academy of Engineering (Great Britain) | Seventh Framework Programme (European Commission) (FP7) | Spain. Ministerio de Ciencia e Innovación (MCINN) | Spain. Ministerio de Economía y Competitividad [Ministry of Economy and Competitiveness] (MINECO) | Spanish MICyN | University of Warwick Undergraduate Research Scholarship
Number of items: 43.
AdvanSiC project, European Union's Horizon Europe programme
Melnyk, Kyrylo, Renz, Arne Benjamin, Cao, Qinze, Gammon, Peter M., Shah, Vishal, Lophitis, Neophytos , Rahimo, Munaf, Nistor, Iulian, Borghese, Alessandro, Maresca, Luca, Irace, Andrea and Antoniou, Marina (2024) Design and optimization of 3.3 kV silicon carbide semi-superjunction schottky power devices. In: The 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Bremen, Germany, 02 - 06 Jun 2024 (In Press)
Advantage West Midlands (AWM)
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Birmingham Science City
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Engineering and Physical Sciences Research Council (EPSRC)
Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Li, Fan, Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications. E3S Web of Conferences, 16 . 12003. doi:10.1051/e3sconf/20171612003 ISSN 2267-1242.
Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751 ISSN 1662-9752.
Gammon, P. M., Li, Fan, Chan, Chun Wa, Sánchez, Ana M., Hindmarsh, Steven A., Gity, Farzan, Trajkovic, Tanya, Kilchytska, Valeriya, Pathirana, Vasantha, Camuso, Gianluca, Ben Ali, Khaled, Flandre, Denis, Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices. Materials Science Forum, 897 . pp. 747-750. doi:10.4028/www.scientific.net/MSF.897.747 ISSN 1662-9752.
Chan, Chun Wa, Li, Fan, Sánchez, Ana M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. doi:10.1109/TED.2017.2719898 ISSN 0018-9383.
Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557 ISSN 1662-9752.
Chan, Chun Wa, Mawby, P. A. and Gammon, P. M. (2016) Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation. IEEE Transactions on Electron Devices, 63 (6). pp. 2442-2448. doi:10.1109/TED.2016.2550865 ISSN 0018-9383.
Li, Fan, Sharma, Yogesh K., Walker, David, Hindmarsh, Steven A., Jennings, Michael, Martin, David, Fisher, Craig A., Gammon, P. M., Pérez-Tomás, Amador and Mawby, P. A. (2016) 3C-SiC transistor with Ohmic contacts defined at room temperature. IEEE Electron Device Letters . doi:10.1109/LED.2016.2593771 ISSN 0741-3106.
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.
European Commission (EC)
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
European Regional Development Fund (ERDF)
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
European Research Council (ERC)
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
European Union (EU)
Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751 ISSN 1662-9752.
Great Britain. Dept. of Trade and Industry (DTI)
Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Guy, O. J., Rimmer, N., Llobet, J., Mestres, N., Godignon, P., Placidi, M., Zabala, M., Covington, James A. and Mawby, P. A. (2010) Integration of HfO2 on Si/SiC heterojunctions for the gate architecture of SiC power devices. Applied Physics Letters, Vol.97 (No.1). 013506. doi:10.1063/1.3462932 ISSN 0003-6951.
Pérez-Tomás, Amador, Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, James A., Burrows, S. E. and Mawby, P. A. (2009) Si/SiC bonded wafer: a route to carbon free SiO2 on SiC. Applied Physics Letters, Vol.94 (No.10). Article: 103510. doi:10.1063/1.3099018 ISSN 0003-6951.
Jennings, M. R., Pérez-Tomás, Amador, Guy, O. J., Hammond, Richard, Burrows, S. E., Gammon, P. M., Lodzinski, M., Covington, James A. and Mawby, P. A. (2008) Si/SiC heterojunctions fabricated by direct wafer bonding. Electrochemical and Solid State Letters, Vol.11 (No.11). H306-H308. doi:10.1149/1.2976158 ISSN 1099-0062.
Pérez-Tomás, Amador, Jennings, M. R., Gammon, P. M., Roberts, G. J., Mawby, P. A. (Philip A.), Millan, J., Godignon, P., Montserrat, J. and Mestres, N. (2008) SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator. Microelectronic Engineering, Volume 85 (Number 4). pp. 704-709. doi:10.1016/j.mee.2007.12.073 ISSN 0167-9317.
Horizon 2020 (European Commission) (H2020)
Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Li, Fan, Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications. E3S Web of Conferences, 16 . 12003. doi:10.1051/e3sconf/20171612003 ISSN 2267-1242.
Gammon, P. M., Li, Fan, Chan, Chun Wa, Sánchez, Ana M., Hindmarsh, Steven A., Gity, Farzan, Trajkovic, Tanya, Kilchytska, Valeriya, Pathirana, Vasantha, Camuso, Gianluca, Ben Ali, Khaled, Flandre, Denis, Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices. Materials Science Forum, 897 . pp. 747-750. doi:10.4028/www.scientific.net/MSF.897.747 ISSN 1662-9752.
Chan, Chun Wa, Li, Fan, Sánchez, Ana M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. doi:10.1109/TED.2017.2719898 ISSN 0018-9383.
Royal Academy of Engineering (Great Britain)
Gammon, P. M., Chan, Chun Wa, Gity, F., Trajkovic, T., Kilchytska, V., Li, Fan, Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications. E3S Web of Conferences, 16 . 12003. doi:10.1051/e3sconf/20171612003 ISSN 2267-1242.
Chan, Chun Wa, Li, Fan, Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Numerical study of energy capability of Si/SiC LDMOSFETs. Materials Science Forum, 897 . pp. 751-754. doi:10.4028/www.scientific.net/MSF.897.751 ISSN 1662-9752.
Gammon, P. M., Li, Fan, Chan, Chun Wa, Sánchez, Ana M., Hindmarsh, Steven A., Gity, Farzan, Trajkovic, Tanya, Kilchytska, Valeriya, Pathirana, Vasantha, Camuso, Gianluca, Ben Ali, Khaled, Flandre, Denis, Mawby, P. A. (Philip A.) and Gardner, J. W. (2017) The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices. Materials Science Forum, 897 . pp. 747-750. doi:10.4028/www.scientific.net/MSF.897.747 ISSN 1662-9752.
Chan, Chun Wa, Li, Fan, Sánchez, Ana M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2017) Comparative study of RESURF Si/SiC LDMOSFETs for high-temperature applications using TCAD modeling. IEEE Transactions on Electron Devices, 64 (9). pp. 3713-3718. doi:10.1109/TED.2017.2719898 ISSN 0018-9383.
Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557 ISSN 1662-9752.
Chan, Chun Wa, Bonyadi, Yeganeh, Mawby, P. A. (Philip A.) and Gammon, P. M. (2016) Si/SiC substrates for the implementation of linear-doped power LDMOS studied with device simulation. Materials Science Forum, 858 . pp. 844-847. doi:10.4028/www.scientific.net/MSF.858.844 ISSN 1662-9752.
Chan, Chun Wa, Mawby, P. A. and Gammon, P. M. (2016) Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation. IEEE Transactions on Electron Devices, 63 (6). pp. 2442-2448. doi:10.1109/TED.2016.2550865 ISSN 0018-9383.
Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi:10.4028/www.scientific.net/MSF.821-823.624
Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
Gammon, P. M., Donchev, E., Pérez-Tomás, Amador, Shah, V. A., Pang, J. S., Petrov, P. K. (Peter K.), Jennings, M. R., Fisher, Craig A., Mawby, P. A. (Philip A.), Leadley, D. R. (David R.) and Alford, Neil McN. (2012) A study of temperature-related non-linearity at the metal-silicon interface. Journal of Applied Physics, Vol.112 . 114513 . doi:http://dx.doi.org/10.1063/1.4768718 ISSN 0021-8979.
Seventh Framework Programme (European Commission) (FP7)
Shah, V. A., Rhead, S., Halpin, John E., Trushkevych, Oksana, Chávez-Ángel, E., Shchepetov, A., Kachkanov, V., Wilson, Neil R., Myronov, Maksym, Reparaz, J. S. et al.
(2014)
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry.
Journal of Applied Physics, Volume 115
(Number 14).
Article number 144307.
doi:10.1063/1.4870807
ISSN 0021-8979.
Spain. Ministerio de Ciencia e Innovación (MCINN)
Pérez-Tomás, Amador, Placidi, Marcel, Fontserè, A., Gammon, P. M. and Jennings, M. R. (2011) Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. Microelectronics Reliability, Vol.51 (No.8). pp. 1325-1329. doi:10.1016/j.microrel.2011.03.023 ISSN 00262714.
Spain. Ministerio de Economía y Competitividad [Ministry of Economy and Competitiveness] (MINECO)
Pérez-Tomás, Amador, Catalàn, G., Fontserè, A., Iglesias, V., Chen, Han, Gammon, P. M., Jennings, M. R., Thomas, M., Fisher, Craig A., Sharma, Yogesh K., Placidi, M., Chmielowska, M., Chenot, S., Porti, M., Nafría, M. and Cordier, Y. (2015) Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology, 26 (11). pp. 1-10. 115203. ISSN 0957-4484.
Spanish MICyN
Fontserè, A., Pérez-Tomás, Amador, Placidi, M., Fernández-Martínez, P., Baron, N., Chenot, S., Cordier, Y., Moreno, J.C., Gammon, P. M. and Jennings, M. R. (2011) Temperature dependence of Al/Ti-based Ohmic contact to GaN devices : HEMT and MOSFET. Microelectronic Engineering, Vol.88 (No.10). pp. 3140-3144. doi:10.1016/j.mee.2011.06.015 ISSN 0167-9317.
University of Warwick Undergraduate Research Scholarship
Woodend, Lee, Gammon, P. M., Shah, Vishal, Pérez-Tomás, Amador, Li, Fan, Hamilton, Dean P., Myronov, Maksym and Mawby, P. A. (Philip A.) (2017) Cryogenic characterisation and modelling of commercial SiC MOSFETs. Materials Science Forum, 897 . pp. 557-560. doi:10.4028/www.scientific.net/MSF.897.557 ISSN 1662-9752.
This list was generated on Fri Apr 19 06:27:01 2024 BST.