Number of items: 6.
Grant, Nicholas E., Pain, Sophie L., Khorani, Edris, Jefferies, Richard, Wratten, Ailish, McNab, S., Walker, David, Han, Yisong, Beanland, R., Bonilla, R. S. and Murphy, J. D.
(2024)
Activation of Al2O3 surface passivation of silicon : separating bulk and surface effects.
Applied Surface Science, 645
.
158786.
doi:10.1016/j.apsusc.2023.158786
ISSN 0169-4332.
Grant, Nicholas E., Pain, Sophie L., Khorani, Edris, Jefferies, Richard, Wratten, Ailish, McNab, Shona, Walker, D., Han, Yisong, Beanland, R., Bonilla, R. S. and Murphy, John D.
(2023)
Dataset to support "Activation of Al2O3 surface passivation of silicon: separating bulk and surface effects".
[Dataset]
Grant, Nicholas E., Pointon, Alex I., Jefferies, Richard, Hiller, Daniel, Han, Yisong, Beanland, Richard, Walker, Marc and Murphy, John D.
(2020)
Data for Atomic level termination for passivation and functionalisation of silicon surfaces.
[Dataset]
Grant, Nicholas E., Pointon, Alex I., Jefferies, Richard, Hiller, Daniel, Han, Yisong, Beanland, Richard, Walker, Marc and Murphy, John D.
(2020)
Atomic level termination for passivation and functionalisation of silicon surfaces.
Nanoscale, 12
.
17332-17341 .
doi:10.1039/d0nr03860a
ISSN 2040-3364.
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim
(2019)
Data for Effect of HCl cleaning on InSbβAl2O3 MOS capacitors.
[Dataset]
Vavasour, Oliver J., Jefferies, Richard, Walker, Marc, Roberts, Joseph W., Meakin, Naomi R., Gammon, P. M., Chalker, Paul R and Ashley, Tim
(2019)
Effect of HCl cleaning on InSbβAl2O3 MOS capacitors.
Semiconductor Science and Technology, 34
(3).
035032.
doi:10.1088/1361-6641/ab0331
ISSN 0268-1242.
This list was generated on Wed Apr 24 20:15:53 2024 BST.