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Number of items: 17.
Renz, A. B., Shah, Vishal, Vavasour, Oliver J., Baker, Guy, Bonyadi, Yegi, Sharma, Yogesh K., Pathirana, Vasantha, Trajkovic, Tanya, Mawby, Philip. A., Antoniou, Marina and Gammon, Peter M. (2022) The optimization of 3.3 kV 4H-SiC JBS diodes. IEEE Transactions on Electron Devices, 69 (1). pp. 298-303. doi:10.1109/ted.2021.3129705 ISSN 1557-9646.
Russell, Stephen, Jennings, M. R. (Michael R.), Dai, Tianxiang, Li, Fan, Hamilton, Dean P., Fisher, Craig A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Pérez-Tomás, Amador (2017) Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation. Materials Science Forum, 897 . pp. 155-158. doi:10.4028/www.scientific.net/MSF.897.155 ISSN 1662-9752.
Li, Fan, Vavasour, O., Walker, Marc, Martin, David, Sharma, Yogesh K., Russell, Stephen, Jennings, M. R., Pérez-Tomás, Amador and Mawby, P. A. (Philip A.) (2017) Physical characterisation of 3C-SiC(001)/SiO2 interface using XPS. Materials Science Forum, 897 . pp. 151-154. doi:10.4028/www.scientific.net/MSF.897.151 ISSN 1662-9752.
Rong, Hua, Sharma, Yogesh K., Dai, Tian Xiang, Li, Fan, Jennings, M. R., Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) High temperature nitridation of 4H-SiC MOSFETs. Materials Science Forum, 858 . pp. 623-626. doi:10.4028/www.scientific.net/MSF.858.623 ISSN 1662-9752.
Li, Fan, Sharma, Yogesh K., Jennings, M. R., Pérez-Tomás, Amador, Shah, V. A., Rong, Hua, Russell, Stephen, Martin, David and Mawby, P. A. (Philip A.) (2016) Improved channel mobility by oxide nitridation for N-Channel MOSFET on 3C-SiC(100)/Si. Materials Science Forum, 858 . pp. 667-670. doi:10.4028/www.scientific.net/MSF.858.667 ISSN 1662-9752.
Li, Fan, Sharma, Yogesh K., Walker, David, Hindmarsh, Steven A., Jennings, Michael, Martin, David, Fisher, Craig A., Gammon, P. M., Pérez-Tomás, Amador and Mawby, P. A. (2016) 3C-SiC transistor with Ohmic contacts defined at room temperature. IEEE Electron Device Letters . doi:10.1109/LED.2016.2593771 ISSN 0741-3106.
Sharma, Yogesh K., Li, Fan, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Thomas, Stephen M., Hamilton, Dean P., Russell, Stephen and Mawby, P. A. (2015) High-temperature (1200–1400°C) dry oxidation of 3C-SiC on silicon. Journal of Electronic Materials, 44 (11). pp. 4167-4174. doi:10.1007/s11664-015-3949-4 ISSN 0361-5235.
Li, Fan, Sharma, Yogesh K., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig A., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2015) Electrical activation of nitrogen heavily implanted 3C-SiC(100). Applied surface science, 353 . pp. 958-963. doi:10.1016/j.apsusc.2015.06.169 ISSN 0169-4332.
Colston, Gerard B., Myronov, Maksym, Rhead, Stephen, Shah, V. A., Sharma, Yogesh K., Mawby, P. A. (Philip A.) and Leadley, D. R. (David R.) (2015) Si1-xCx/Si(001) heterostructures for use in Schottky diode rectifiers demonstrating high breakdown voltage and negligible leakage current. Materials Science Forum, 821-823 . pp. 571-574. doi:10.4028/www.scientific.net/MSF.821-823.571 ISSN 1662-9752.
Pérez-Tomás, Amador, Català n, G., Fontserè, A., Iglesias, V., Chen, Han, Gammon, P. M., Jennings, M. R., Thomas, M., Fisher, Craig A., Sharma, Yogesh K., Placidi, M., Chmielowska, M., Chenot, S., Porti, M., NafrÃa, M. and Cordier, Y. (2015) Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. Nanotechnology, 26 (11). pp. 1-10. 115203. ISSN 0957-4484.
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process. IEEE Transactions on Semiconductor Manufacturing, Volume 27 (Number 3). pp. 443-451. doi:10.1109/TSM.2014.2336701 ISSN 0894-6507.
Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Li, Fan, Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes. In: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), , Finland, 26-28 Aug 2014. Published in: 2014 16th European Conference on Power Electronics and Applications (EPE'14-ECCE Europe), pp. 1-9. doi:10.1109/EPE.2014.6910738
Thomas, S. M., Sharma, Yogesh K., Crouch, M. A., Fisher, Craig A., Pérez-Tomás, Amador, Jennings, M. R. and Mawby, P. A. (Philip A.) (2014) Enhanced field effect mobility on 4H-SiC by oxidation at 1500◦C. IEEE Journal of the Electron Devices Society, 2 (5). pp. 114-117. ISSN 2168-6734.
Thomas, Stephen M., Jennings, M. R., Sharma, Yogesh K., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2014) Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors. Materials Science Forum, Volume 778-780 . pp. 599-602. doi:10.4028/www.scientific.net/MSF.778-780.599 ISSN 1662-9752.
Jennings, M. R., Fisher, Craig A., Walker, David, Sánchez, Ana M., Pérez-Tomás, Amador, Hamilton, Dean P., Gammon, P. M., Burrows, S. E. (Susan E.), Thomas, Stephen M., Sharma, Yogesh K., Li, Fan and Mawby, P. A. (Philip A.) (2014) On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts. Materials Science Forum, Volume 778-780 . pp. 693-696. doi:10.4028/www.scientific.net/MSF.778-780.693 ISSN 1662-9752.
Sharma, Yogesh K., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Modic, Aaron, Xu, Yi, Granfukel, Eric, Jennings, M. R., Fisher, Craig A., Thomas, Stephen M., Mawby, P. A. (Philip A.), Dhar, Sarit, Feldman, Leonard C. and Williams, John (2014) Thin PSG process for 4H-SiC MOSFET. Materials Science Forum, Volume 778-780 . pp. 513-516. doi:10.4028/www.scientific.net/MSF.778-780.513 ISSN 1662-9752.
Hamilton, Dean P., Jennings, M. R. (Michael R.), Sharma, Yogesh K., Fisher, Craig A., Alatise, Olayiwola M. and Mawby, P. A. (Philip A.) (2014) Evaluation of commercially available SiC devices and packaging materials for operation up to 350°C. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Pittsburgh, PA, 14-18 Sep 2014. Published in: 2014 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 4381-4387. doi:10.1109/ECCE.2014.6953720
This list was generated on Thu Mar 28 09:58:42 2024 GMT.