2018

Berkutov, I. B., Andrievskii, V. V., Kolesnichenko, Yu. A., Komnik, Yu. F. and Mironov, O. A. (2018) The overheating effects in germanium quantum well with two subbands occupied. Low Temperature Physics, 44 (8). pp. 797-802. doi:10.1063/1.5049161 ISSN 1063-777X.

2017

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O A., Gabani, S., Dobbie, A. and Leadley, D. R. (David R.) (2017) An origin behind Rashba spin splitting within inverted doped sGe heterostructures. Applied Physics Letters, 110 (4). 042405. doi:10.1063/1.4974254 ISSN 0003-6951.

2016

Mironov, O. A., D’Ambrumenil, Nicholas, Dobbie, A. (Andrew), Leadley, D. R. (David R.), Suslov, A. V. and Green, E. (2016) Fractional quantum Hall states in a Ge quantum well. Physical Review Letters, 116 (17). 176802. doi:10.1103/PhysRevLett.116.176802 ISSN 0031-9007.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Kolesnichenko, Yu. A., Berkutova, A. I., Leadley, D. R. (David R.) and Mironov, O. A. (2016) Interference effects in silicon-germanium heterostructures with quantum wells of different widths. Low Temperature Physics, 42 (2). pp. 111-118. doi:10.1063/1.4941963 ISSN 1063-777X.

2014

Mironov, O. A., Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Uhlarz, M., Chrastina, Daniel, Hague, J. P., Kiatgamolchai, S., Beanland, R., Gabani, S., Berkutov, I. B., Helm, Manfred, Drachenko, O., Myronov, Maksym and Leadley, D. R. (David R.) (2014) Ultra high hole mobilities in a pure strained Ge quantum well. Thin Solid Films, Volume 557 . pp. 329-333. doi:10.1016/j.tsf.2013.10.118 ISSN 0040-6090.

Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Beanland, R., Walker, David, Huband, Steven, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2014) Anisotropy in the hole mobility measured along the [110] and [110] orientations in a strained Ge quantum well. Applied Physics Letters, Volume 104 (Number 13). Article number 132108. doi:10.1063/1.4870392 ISSN 0003-6951.

Zudov, M. A., Mironov, O. A., Ebner, Q. A., Martin, P. D., Shi, Q. and Leadley, D. R. (David R.) (2014) Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well. Physical Review B (Condensed Matter and Materials Physics), Volume 89 (Number 12). Article number 125401. doi:10.1103/PhysRevB.89.125401 ISSN 1098-0121.

Drichko, I. L., Malysh, V. A., Smirnov, I. Yu., Golub, L. E., Tarasenko, S. A., Suslov, A. V., Mironov, O. A., Kummer, M. and von Känel, H. (2014) In-plane magnetic field effect on hole cyclotron mass and gz factor in high-mobility SiGe/Ge/SiGe structures. Physical Review B (Condensed Matter and Materials Physics), Volume 90 (Number 12). doi:10.1103/PhysRevB.90.125436 ISSN 1098-0121.

Mironov, O. A., Hassan, A. H. A., Uhlarz, M., Kiatgamolchai, S., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.), Halpin, John E., Rhead, S., Allred, Phil, Myronov, Maksym, Gabani, S., Berkutov, I. B. and Leadley, D. R. (David R.) (2014) New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology. Physica Status Solidi (c), Volume 11 (Number 1). pp. 61-64. doi:10.1002/pssc.201300164 ISSN 18626351.

2013

Drichko, I. L., Malysh, V. A., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A., Kummer, M. and von Känel, H. (2013) Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields. Journal of Applied Physics, Volume 114 (Number 7). 074302. doi:10.1063/1.4818436 ISSN 0021-8979.

Hassan, A. H. A., Mironov, O. A., Feher, A., Cizmar, E., Gabani, S., Morris, R. J. H. (Richard J. H.), Dobbie, A. (Andrew), Shah, V. A., Myronov, Maksym, Berkutov, I. B., Andrievskii, V. V. and Leadley, D. R. (David R.) (2013) Pure Ge quantum well with high hole mobility. In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Coventry, UK, 19-21 March 2013. Published in: 14th International Conference on Ultimate Integration on Silicon (ULIS) pp. 117-120. ISBN 9781467348003. doi:10.1109/ULIS.2013.6523527

Hassan, A. H. A., Mironov, O. A., Dobbie, A. (Andrew), Morris, J. H., Halpin, John E., Shah, V. A., Myronov, Maksym, Leadley, D. R. (David R.), Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V. and Berkutov, I. B. (2013) Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well. In: 2013 IEEE 33rd International Scientific Conference Electronics and Nanotechnology, ELNANO 2013, Kiev, Ukraine, 16-19 April 2013. Published in: 2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) pp. 51-55. ISBN 9781467346696. doi:10.1109/ELNANO.2013.6552021

2012

Berkutov, I. B., Andrievskii, V. V., Komnik, Y. F., Hackbarth, T., Leadley, D. R. (David R.) and Mironov, O. A. (2012) On the magnetoresistance maximum observed in the intermediate magnetic field region for the two-dimensional hole gas in a strained Si0.05Ge0.95 quantum well. Journal of Low Temperature Physics, Volume 168 (Number 5-6). pp. 285-296. doi:10.1007/s10909-012-0627-2 ISSN 0022-2291.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Kolesnichenko, Yu. A., Morris, R. J. H. (Richard J. H.), Leadley, D. R. (David R.) and Mironov, O. A. (2012) Magnetotransport studies of SiGe-based p-type heterostructures : problems with the determination of effective mass. Low Temperature Physics, Volume 38 (Number12). Article number 1145. doi:10.1063/1.4770520 ISSN 1063-777X.

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2012) Quantum hall ferromagnetic-paramagnetic transition in p-Si/SiGe/Si quantum wells in a tilted magnetic field. Journal of Physics: Conference Series, Volume 400 (Number 4). Article number 042005. doi:10.1088/1742-6596/400/4/042005 ISSN 1742-6596.

2011

Berkutov, I. B., Andrievskii, V. V., Komnik, Y. F. and Mironov, O. A. (2011) Study of overheating effects in SiGe-based p-type heterostructures : methods of the hole temperature determination. Materialwissenschaft und Werkstofftechnik, Volume 42 (Number 1). pp. 15-18. doi:10.1002/mawe.201100722 ISSN 0933-5137.

2010

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2010) Magnetoresistivity and acoustoelectronic effects in a tilted magnetic field in p-Si/SiGe/Si structures with an anisotropic g factor. Journal of experimental and Theoretical Physics, Vol.111 (No.3). pp. 495-502. doi:10.1134/S1063776110090189 ISSN 1063-7761.

Mironov, O. A., Goiran, M., Galibert, J., Kozlov, D. V., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V. I., Isella, G., Kummer, M., von Känel, H., Drachenko, O., Helm, Manfred, Wosnitza, Joachim, Morris, R. J. H. and Leadley, D. R. (David R.) (2010) Cyclotron resonance of extremely conductive 2D holes in high Ge content strained heterostructures. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 216-221. doi:10.1007/s10909-009-0147-x ISSN 0022-2291.

Mironov, O. A., Zherlitsyn, S., Uhlarz, M., Skourski, Y., Palewski, T. and Wosnitza, J. (2010) Microminiature Hall probes for applications at pulsed magnetic fields up to 87 Tesla. In: 9th International Conference on Research in High Magnetic Fields (RHMF 2009), Dresden, Germany, July 22-25, 2009. Published in: Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 315-318. doi:10.1007/s10909-009-0140-4 ISSN 0022-2291.

Leadley, D. R. (David R.), Andrievskii, V. V., Berkutov, I. B., Komnik, Y. F., Hackbarth, T. and Mironov, O. A. (2010) Quantum interference effects in p-Si1-x Ge (x) quantum wells. In: 9th International Conference on Research in High Magnetic Fields (RHMF 2009), Dresden, Germany, July 22-25, 2009. Published in: Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 230-233. doi:10.1007/s10909-009-0120-8 ISSN 0022-2291.

Leadley, D. R. (David R.), Andrievskii, V. V., Berkutov, Igor B., Komnik, Yuri F., Hackbarth, T. and Mironov, O. A. (2010) Quantum interference effects in p-Si1−xGex quantum wells. Journal of Low Temperature Physics, Vol.159 (No.1-2). pp. 230-233. doi:10.1007/s10909-009-0120-8 ISSN 0022-2291.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F. and Mironov, O. A. (2010) Positive quasiclassical magnetoresistance and quantum effects in germanium quantum wells. Low Temperature Physics, Vol.36 (No.12). p. 1076. doi:10.1063/1.3536348 ISSN 1063-777X.

2009

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2009) Magnetoresistance in dilute p-Si/SiGe in parallel and tilted magnetic fields. Annalen der Physik, Vol.18 (No.12 (Sp. Iss. SI)). pp. 939-943. doi:10.1002/andp.200910380 ISSN 0003-3804.

Drichko, I. L., Diakonov, A. M., Lebedeva, E. V., Smirnov, I. Yu., Mironov, O. A., Kummer, M. and von Kaenel, H. (2009) Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure. Journal of Applied Physics, Vol.106 (No.9). Article no. 094305. doi:10.1063/1.3251568 ISSN 0021-8979.

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Mironov, O. A. and Leadley, D. R. (David R.) (2009) Large magnetoresistance of a dilute p-Si/SiGe/Si quantum well in a parallel magnetic field. Physical Review B (Condensed Matter and Materials Physics), Vol.79 (No.20). article no. 205310. doi:10.1103/PhysRevB.79.205310 ISSN 1098-0121.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Mironov, O. A., Mironov, M. and Leadley, D. R. (David R.) (2009) Shubnikov-de Haas oscillations of the conductivity of a two-dimensional gas in quantum wells based on germanium and silicon. Determination of the effective mass and g factor. Low Temperature Physics, Vol.35 (No.2). pp. 141-145. doi:10.1063/1.3075945 ISSN 1063-777X.

2008

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu. F., Myronov, Maksym and Mironov, O. A. (2008) Overheating effect and hole-phonon interaction in SiGe heterostructures. Low Temperature Physics, Volume 34 (Number 11). pp. 943-946. doi:10.1063/1.3009592 ISSN 1063-777X.

Berkutov, I. B., Andrievskii, V. V., Komnik, Yu F., Leadley, D. R. (David R.), Myronov, Maksym, von Kanel, H. and Mironov, O. A. (2008) A new method of investigating the quantum channel surface. Journal of Physics-Condensed Matter, Vol.20 (No.22). Article no. 224024 . doi:10.1088/0953-8984/20/22/224024 ISSN 0953-8984.

Drichko, I. L., Dyakonov, A. M., Smirnov, I. Yu., Suslov, A. V., Galperin, Y. M., Vinokur, Valerii M., Myronov, Maksym, Mironov, O. A. and Leadley, D. R. (David R.) (2008) Magnetotransport in low-density p-Si/SiGe heterostructures : from metal through hopping insulator to Wigner glass. Physical Review B (Condensed Matter and Materials Physics), Vol.77 (No.8). article no. 085327. doi:10.1103/PhysRevB.77.085327 ISSN 1098-0121.

2007

Drichko, I. L., Smirnov, I. Yu., Suslov, A. V., Gal'perin, Yu. M., Vinokur, V. M., Myronov, Maksym and Mironov, O. A. (2007) Static and high-frequency hole transport in p-Si/SiGe heterostructures in the extreme quantum limit. JETP Letters, Vol.86 (No.4). pp. 244-248. doi:10.1134/S0021364007160059 ISSN 0021-3640.

2006

Franco, N., Alves, E., Vallera, A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Parker, Evan H. C. and Barradas, N. P. (2006) RBS and XRD analysis of SiGe/Ge heterostructures for p-HMOS applications. In: 17th International Conference on Ion Beam Analysis, Seville, Spain, June 26 - July 01, 2005. Published in: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol.249 (No.1-2). pp. 878-881. doi:10.1016/j.nimb.2006.03.155 ISSN 1872-9584.

Berkutov, I. B., Komnik, Yu. F., Andrievskii, V. V., Mironov, O. A., Myronov, Maksym and Leadley, D. R. (David R.) (2006) Weak localization and charge-carrier interaction effects in a two-dimensional hole gas in a germanium quantum well in a SiGe/Ge/SiGe heterostructure. Low Temperature Physics, Volume 32 (Number 7). pp. 683-688. doi:10.1063/1.2216282 ISSN 1063-777X.

2004

Myranov, Maksym, Mironov, O. A., Durov, Sergiy, Whall, Terry E., Parker, Evan H. C., Hackbarth, T., Höck, G., Herzog, H.-J. and König, U. (2004) Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor. Applied Physics Letters, Vol.84 (No.4). pp. 610-612. doi:10.1063/1.1643532 ISSN 0003-6951.

2003

Irisawa, T., Myranov, Maksym, Mironov, O. A., Parker, Evan H. C., Nakagawa, Kiyokazu, Murata, M., Koh, S. and Shiraki, Y. (2003) Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures. Applied Physics Letters, Vol.82 (No.9). pp. 1425-1427. doi:10.1063/1.1558895 ISSN 0003-6951.

2002

Myranov, Maksym, Irisawa, T., Mironov, O. A., Koh, S., Shiraki, Y., Whall, Terry E. and Parker, Evan H. C. (2002) Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures. Applied Physics Letters, Vol.80 (No.17). pp. 3117-3119. doi:10.1063/1.1473690 ISSN 0003-6951.

2000

Sadeghzadeh, Mohammad Ali, Horrell, A. I., Mironov, O. A., Parker, Evan H. C., Whall, Terry E. and Kearney, M. J. (2000) Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure. Applied Physics Letters, Vol.76 (No.18). pp. 2568-2570. doi:10.1063/1.126410 ISSN 0003-6951.

Ansaripour, Ghassem, Braithwaite, Glyn, Myranov, Maksym, Mironov, O. A., Parker, Evan H. C. and Whall, Terry E. (2000) Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures. Applied Physics Letters, Vol.76 (No.9). pp. 1140-1142. doi:10.1063/1.125963 ISSN 0003-6951.

1996

Khizhny, V. I., Mironov, O. A., Parker, Evan H. C., Phillips, P. J. (Peter J.), Whall, Terry E. and Kearney, Michael J. (1996) Direct evidence for a piezoelectriclike effect in coherently strained SiGe/Si heterostructures. Applied Physics Letters, Vol.69 (No.7). pp. 960-962. doi:10.1063/1.117095 ISSN 0003-6951.

1994

Whall, Terry E., Mattey, Nevil L., Plews, Andrew D., Phillips, P. J. (Peter J.), Mironov, O. A., Nicholas, R. J. and Kearney, M. J. (1994) Effective mass and quantum lifetime in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. Applied Physics Letters, Vol.64 (No.3). pp. 357-359. doi:10.1063/1.111147 ISSN 0003-6951.