2024

Niewelt, T., Maischner, F., Kwapil, W., Khorani, E., Pain, S. L., Jung, Y., Hopkins, E. C. B., Frosch, P. P., Altermatt, H., Guo, H., Wang, Y. C., Grant, N. E. and Murphy, J. D. (2024) Stability of industrial gallium-doped Czochralski silicon PERC cells and wafers. Solar Energy Materials and Solar Cells, 266 . 112645. doi:10.1016/j.solmat.2023.112645 ISSN 0927-0248.

Grant, Nicholas E., Pain, Sophie L., Khorani, Edris, Jefferies, Richard, Wratten, Ailish, McNab, S., Walker, David, Han, Yisong, Beanland, R., Bonilla, R. S. and Murphy, J. D. (2024) Activation of Al2O3 surface passivation of silicon : separating bulk and surface effects. Applied Surface Science, 645 . 158786. doi:10.1016/j.apsusc.2023.158786 ISSN 0169-4332.

2023

Niewelt, Tim, Maischner, F., Kwapil, Wolfram, Khorani, Edris, Pain, Sophie L., Jung, Y., Hopkins, E. C. B., Frosch, M., Altermatt, P. P., Guo, H., Wang, Y. C., Grant, Nicholas E. and Murphy, John D. (2023) Dataset to support "Stability of industrial gallium-doped Czochralski silicon PERC cells and wafers". [Dataset]

Grant, Nicholas E., Pain, Sophie L., Khorani, Edris, Jefferies, Richard, Wratten, Ailish, McNab, Shona, Walker, D., Han, Yisong, Beanland, R., Bonilla, R. S. and Murphy, John D. (2023) Dataset to support "Activation of Al2O3 surface passivation of silicon: separating bulk and surface effects". [Dataset]

Xu, Xiangdong, Martín‐Yerga, Daniel, Grant, Nicholas E., West, Geoffrey D., Pain, Sophie L., Kang, Minkyung, Walker, Marc, Murphy, John D. and Unwin, Patrick R. (2023) Interfacial chemistry effects in the electrochemical performance of silicon electrodes under lithium‐ion battery conditions. Small, 19 (40). 2303442. doi:10.1002/smll.202303442 ISSN 1613-6810.

Wratten, Ailish, Pain, Sophie L., Yadev, Anup, Khorani, Edris, Niewelt, Tim, Black, L., Bartholazzi, G., Walker, David, Grant, Nicholas E. and Murphy, John D. (2023) Exploring hafnium oxide’s potential for passivating contacts for silicon solar cells. Solar Energy Materials and Solar Cells, 259 . 112457. doi:10.1016/j.solmat.2023.112457 ISSN 0927-0248.

Khorani, Edris, Messmer, Christoph A., Pain, Sophie L., Niewelt, Tim, Healy, Brendan F. M., Wratten, Ailish, Walker, Marc, Grant, Nicholas E. and Murphy, John D. (2023) Electronic band offset determination of oxides grown by atomic layer deposition on silicon. IEEE Journal of Photovoltaics, 13 (5). pp. 682-690. doi:10.1109/JPHOTOV.2023.3291048 ISSN 2156-3381.

Wratten, Ailish, Pain, Sophie L., Yadav, Anup, Khorani, Edris, Niewelt, Tim, Black, L., Bartholazzi, G., Walker, David, Grant, Nicholas E. and Murphy, John D. (2023) Data in support of Exploring hafnium oxide’s potential for passivating contacts for silicon solar cells. [Dataset]

Khorani, Edris, Messmer, Christoph A., Pain, Sophie L., Niewelt, Tim, Healy, Brendan F. M., Wratten, Ailish, Walker, Marc, Grant, Nicholas E. and Murphy, John D. (2023) Dataset to support Electronic band offset determination of oxides grown by atomic layer deposition on silicon. [Dataset]

Wratten, Ailish, Walker, David, Khorani, Edris, Healy, Brendan F. M., Grant, Nicholas E. and Murphy, John D. (2023) Hafnium oxide : a thin film dielectric with controllable etch resistance for semiconductor device fabrication. AIP Advances, 13 (6). 065113. doi:10.1063/5.0144639 ISSN 2158-3226.

Pain, S., Khorani, E., Niewelt, T., Wratten, A., Walker, M., Grant, N. E. and Murphy, J. D. (2023) Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon. Nanoscale, 15 (25). 10593-10605 . doi:10.1039/d3nr01374j ISSN 2040-3364.

Wratten, Ailish, Walker, David, Khorani, Edris, Healy, Brendan F. M., Grant, Nicholas E. and Murphy, John D. (2023) Data to support "Hafnium oxide : a thin film dielectric with controllable etch resistance for semiconductor device fabrication". [Dataset] (In Press)

Pain, Sophie, Khorani, Edris, Niewelt, Tim, Wratten, Ailish, Walker, Marc, Grant, Nicholas E. and Murphy, John D. (2023) Data to support "Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon". [Dataset] (In Press)

Butler-Caddle, Edward, Grant, Nicholas E., Pain, Sophie L., Murphy, John D., Jayawardena, K. D. G. Imalka and Lloyd-Hughes, James (2023) Terahertz photoconductance dynamics of semiconductors from sub-nanosecond to millisecond timescales. Applied Physics Letters, 122 (1). 012101. doi:10.1063/5.0130721 ISSN 0003-6951.

Wratten, Ailish, Pain, Sophie L., Walker, David, Renz, A. B., Khorani, Edris, Niewelt, Tim, Grant, Nicholas E. and Murphy, John D. (2023) Data for Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin films. [Dataset]

Wratten, Ailish, Pain, S. L., Walker, D., Renz, A. B., Khorani, Edris, Niewelt, Tim, Grant, N. E. and Murphy, John D. (2023) Mechanisms of silicon surface passivation by negatively charged hafnium oxide thin films. IEEE Journal of Photovoltaics, 13 (1). pp. 40-47. doi:10.1109/JPHOTOV.2022.3227624 ISSN 2156-3381.

McNab, Shona, Niu, Xinya, Khorani, Edris, Wratten, Ailish, Morisset, Audrey, Grant, Nicholas E., Murphy, John D., Altermatt, Pietro P., Wright, Matthew, Wilshaw, Peter R. and Bonilla, Ruy S. (2023) SiNx and AlOx nanolayers in hole selective passivating contacts for high efficiency silicon solar cells. IEEE Journal of Photovoltaics, 13 (1). pp. 22-32. doi:10.1109/JPHOTOV.2022.3226706 ISSN 2156-3381.

Mrnka, Michal, Penketh, Harry, Hooper, Ian R., Saxena, Sonal, Grant, Nicholas E., Murphy, John D., Phillips, David B. and Hendry, Euan (2023) Terahertz imaging through emissivity control. Optica . ISSN 2334-2536. (In Press)

2022

Hooper, I. R., Khorani, Edris, Romain, X., Barr, L. E., Niewelt, T., Saxena, S., Wratten, A., Grant, Nicholas E., Murphy, J. D. and Hendry, E. (2022) Engineering the carrier lifetime and switching speed in Si-based mm-wave photomodulators. Journal of Applied Physics, 132 . 233102. doi:10.1063/5.0128234 ISSN 0021-8979.

Pain, Sophie, Khorani, Edris, Niewelt, Tim, Wratten, Ailish, Paez Fajardo, Galo J., Winfield, Ben, Bonilla, Ruy S., Walker, Marc, Piper, Louis F. J., Grant, Nicholas E. and Murphy, John D. (2022) Electronic characteristics of ultra-thin passivation layers for silicon photovoltaics. Advanced Materials Interfaces, 9 (28). 2201339. doi:10.1002/admi.202201339 ISSN 2196-7350.

Butler-Caddle, Edward, Khrushchev, Igor, Pain, Sophie L., Grant, Nicholas E., Murphy, John D. and Lloyd-Hughes, James (2022) THz photoconductivity dynamics of semiconductors from sub-nanosecond to millisecond timescales. In: 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, Netherlands, 28 Aug - 02 Sep 2022. Published in: 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) ISBN 9781728194271. doi:10.1109/irmmw-thz50927.2022.9895922

De Guzman, Joyce Ann T., Markevich, Vladimir P., Mullins, Jack, Grant, Nicholas E., Murphy, John D., Hiller, Daniel, Halsall, Matthew P. and Peaker, Anthony R. (2022) Formation and elimination of electrically active thermally-induced defects in float-zone-grown silicon crystals. In: SiliconPV 2021, the 11th International Conference on Crystalline Silicon Photovoltaics, Hamelin, Germany, 19–23 Apr 2021. Published in: AIP Conference Proceedings, 2487 (1). ISBN 9780735443624. doi:10.1063/5.0089287 ISSN 0094-243X.

Murphy, J. D., Grant, N. E., Pain, Sophie, Niewelt, T., Wratten, A., Khorani, E., Markevich, V. P., Peaker, A. R., Altermatt, P. P., Lord, J. S. and Yokoyama, K. (2022) Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy. Journal of Applied Physics, 132 (6). 065704. doi:10.1063/5.0099492 ISSN 0021-8979.

Pain, Sophie, Khorani, Edris, Niewelt, Tim, Wratten, Ailish, Paez Fajardo, Galo J., Winfield, Ben, Bonilla, Ruy S., Walker, Marc, Piper, Louis F. J., Grant, Nicholas E. and Murphy, John D. (2022) Data for Electronic characteristics of ultra-thin passivation layers for silicon photovoltaics. [Dataset]

Grant, Nicholas E., Pain, Sophie, White, Joshua T., Walker, Marc, Prokes, Ivan and Murphy, John D. (2022) Data for Enhanced surface passivation of sub-nanometer silicon dioxide films by superacidic treatments. [Dataset]

Renz, A. B., Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, G. W. C., Grant, Nicholas E., Murphy, John D., Mawby, Philip A. and Shah, Vishal (2022) The improved reliability performance of post-deposition annealed ALD-SiO2. Materials Science Forum, 1062 . pp. 325-329. doi:10.4028/p-b76y6c ISSN 1662-9752.

Grant, Nicholas E., Pain, Sophie, White, Joshua T., Walker, Marc, Prokes, Ivan and Murphy, John D. (2022) Enhanced surface passivation of sub-nanometer silicon dioxide films by superacidic treatments. ACS Applied Energy Materials, 5 (2). pp. 1542-1550. doi:10.1021/acsaem.1c02935 ISSN 2574-0962.

Pain, Sophie, Grant, Nicholas E. and Murphy, John D. (2022) Room temperature enhancement of electronic materials by superacid analogues. ACS Nano, 16 (1). pp. 1260-1270. doi:10.1021/acsnano.1c09085 ISSN 1936-0851.

Niewelt, T., Steinhauser, B., Richter, A., Veith-Wolf, B., Fell, A., Hammann, B., Grant, Nicholas E., Black, L., Tang, J., Youssef, A., Murphy, J. D., Schmidt, J., Schubert, M. C. and Glunz, S. W. (2022) Reassessment of the intrinsic bulk recombination in crystalline silicon. Solar Energy Materials and Solar Cells, 235 . 111467. doi:10.1016/j.solmat.2021.111467 ISSN 0927-0248.

Renz, Arne Benjamin, Vavasour, Oliver J., Gammon, Peter M., Li, Fan, Dai, Tianxiang, Baker, Guy, Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Shah, Vishal and Gott, James A. (2022) (Invited, Digital Presentation) Improved reliability of 4H-SiC metal-oxide-semiconductor devices utilising atomic layer deposited layers with enhanced interface quality. ECS Transactions, 108 (2). pp. 43-49. doi:10.1149/10802.0043ecst ISSN 1938-5862.

Yu, M., Wright, M., Chen, J., Shi, Y., Hallam, B., Hwu, E. T., Grant, Nicholas E., Murphy, John D., Altermatt, P. P., Wilshaw, P. and Bonilla, S. (2022) Towards high efficiency inversion layer cells based on ion-charged dielectrics. In: 8th World Conference on Photovoltaic Energy Conversion, Milan, Italy, 26–30 Sep 2022. Published in: Proceedings of the 8th World Conference on Photovoltaic Energy Conversion pp. 44-54. ISBN 3936338868. doi:10.4229/WCPEC-82022-1BO.1.3 ISSN 2196-100X.

2021

Pain, Sophie L., Grant, Nicholas E. and Murphy, John D. (2021) Data for Room temperature enhancement of electronic materials by superacid analogues. [Dataset]

Grant, Nicholas E., Altermat, Pietro P., Niewelt, Tim, Post, Regina, Kwapil, Wolfram, Schubert, Martin C. and Murphy, John D. (2021) Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cells. Solar RRL, 5 . 2000754. doi:10.1002/solr.202000754 ISSN 2367-198X.

Renz, A. B., Li, F., Vavasour, Oliver J., Gammon, P. M., Dai, T., Baker, G. W. C., Via, F. La, Zielinski, M. (Marcin), Zhang, L., Grant, Nicholas E., Murphy, John D., Mawby, P. A. (Philip A.), Jennings, M. R. (Michael R.) and Shah, V. A. (2021) Initial investigations into the MOS interface of freestanding 3C-SiC layers for device applications. Semiconductor Science and Technology, 36 (5). 055006. doi:10.1088/1361-6641/abefa1 ISSN 1361-6641.

Schön, J., Niewelt, T., Mu, D., Maus, S., Wolf, A., Murphy, John D. and Schubert, M. C. (2021) Experimental and theoretical study of oxygen precipitation and the resulting limitation of silicon solar cell wafers. IEEE Journal of Photovoltaics, 11 (2). pp. 289-297. doi:10.1109/JPHOTOV.2020.3044353 ISSN 2156-3381.

Grant, Nicholas E., Altermatt, Pietro P., Niewelt, Tim, Post, Regina, Kwapil, Wolfram, Schubert, Martin C. and Murphy, John D. (2021) Data for Gallium-doped silicon for high-efficiency commercial passivated emitter and rear solar cells. [Dataset]

Renz, A. B., Vavasour, Oliver J., Gammon, P. M., Li, Fan, Dai, Tianxiang, Antoniou, M., Baker, G. W. C., Bashar, E., Grant, N. E, Murphy, J. D., Mawby, P. A. and Shah, V. A. (2021) The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing, 122 . 105527. doi:10.1016/j.mssp.2020.105527 ISSN 1369-8001.

Zhu, Yan, Rougieux, Fiacre, Grant, Nicholas E., de Guzman, Joyce Ann T., Murphy, John D., Markevich, Vladimir P., Coletti, Gianluca, Peaker, Anthony R. and Hameiri, Ziv (2021) Electrical characterization of thermally activated defects in n-type float-zone silicon. IEEE Journal of Photovoltaics, 11 (1). pp. 26-35. doi:10.1109/JPHOTOV.2020.3031382 ISSN 2156-3381.

2020

Hiller, Daniel, Markevich, Vladimir P., de Guzman, Joyce Ann T., König, Dirk, Prucnal, Slawomir, Bock, Wolfgang, Julin, Jaakko, Peaker, Anthony R., Macdonald, Daniel, Grant, Nicholas E. and Murphy, John D. (2020) Kinetics of bulk lifetime degradation in Float‐Zone (FZ) silicon : fast activation and annihilation of grown‐in defects and the role of hydrogen vs light. Physica Status Solidi (a), 217 (17). 2000436. doi:10.1002/pssa.202000436 ISSN 0031-8965.

Grant, Nicholas E., Pointon, Alex I., Jefferies, Richard, Hiller, Daniel, Han, Yisong, Beanland, Richard, Walker, Marc and Murphy, John D. (2020) Data for Atomic level termination for passivation and functionalisation of silicon surfaces. [Dataset]

Pointon, Alex I., Grant, Nicholas E., Pain, Sophie, White, Joshua and Murphy, John D. (2020) Sub-2 cm/s passivation of silicon surfaces by aprotic solutions. Applied Physics Letters, 116 . 121601. doi:10.1063/5.0003704 ISSN 0003-6951.

Pointon, Alex I., Grant, Nicholas E., Pain, Sophie, White, Joshua T. and Murphy, John D. (2020) Data for Sub-2 cm/s passivation of silicon surfaces by aprotic solutions. [Dataset]

Grant, Nicholas E., Scowcroft, Jennifer R., Pointon, A. I., Al-Amin, Mohammad, Altermatt, Pietro P. and Murphy, John D. (2020) Lifetime instabilities in gallium doped monocrystalline PERC silicon solar cells. Solar Energy Materials and Solar Cells, 206 . 110299. doi:10.1016/j.solmat.2019.110299 ISSN 0927-0248.

Grant, Nicholas E., Kho, T. C., Fong, K. C., Franklin, E., McIntosh, K. R., Stocks, M., Wang, Y., Wang, Er-Chien, Zin, N. S., Murphy, John D. and Blakers, A. (2020) Data for Anodic oxidations : excellent process durability and surface passivation for high efficiency silicon solar cells. [Dataset]

Grant, Nicholas E., Pointon, Alex I., Jefferies, Richard, Hiller, Daniel, Han, Yisong, Beanland, Richard, Walker, Marc and Murphy, John D. (2020) Atomic level termination for passivation and functionalisation of silicon surfaces. Nanoscale, 12 . 17332-17341 . doi:10.1039/d0nr03860a ISSN 2040-3364.

2019

Abernethy, R. G., Gibson, J. S. K -L., Giannattasio, A., Murphy, J. D., Wouters, O., Bradnam, S., Packer, L. W., Gilbert, M. R., Klimenkov, M., Rieth, M., Schneider, H -C., Hardie, C. D., Roberts, S. G. and Armstrong, D. E. J. (2019) Effects of neutron irradiation on the brittle to ductile transition in single crystal tungsten. Journal of Nuclear Materials, 527 . 151799. doi:10.1016/j.jnucmat.2019.151799 ISSN 0022-3115.

Hooper , I. R., Grant, N. E., Barr, L. E., Hornett, S. M., Murphy, John D. and Hendry, E. (2019) High efficiency photomodulators for millimeter wave and THz radiation. Scientific Reports, 9 . 18304. doi:10.1038/s41598-019-54011-6 ISSN 2045-2322.

Grant, Nicholas E., Kho, T. C., Fong, K. C., Franklin, E., McIntosh, K. R., Stocks, M., Wan, Y., Wang, Er-Chien, Zin, N. S., Murphy, John D. and Blakers, A. (2019) Anodic oxidations : excellent process durability and surface passivation for high efficiency silicon solar cells. Solar Energy Materials and Solar Cells, 203 . 110155. doi:10.1016/j.solmat.2019.110155 ISSN 0927-0248.

Grant, Nicholas E., Scowcroft, Jennifer R., Pointon, A. I., Al-Amin, Mohammad, Altermatt, Pietro P. and Murphy, John D. (2019) Data for Lifetime instabilities in gallium doped monocrystalline PERC silicon solar cells. [Dataset]

Murphy, John D., Pointon, A. I., Grant, Nicholas E., Shah, V. A., Myronov, Maksym, Voronkov, Vladimir V. and Falster, R. J. (2019) Minority carrier lifetime in indium doped silicon for photovoltaics. Progress in Photovoltaics : Research and Applications, 27 (10). pp. 844-855. doi:10.1002/pip.3172 ISSN 1099-159X.

Al-Amin, Mohammad, Grant, Nicholas E., Pointon, A. I. and Murphy, J. D. (2019) Iodine-ethanol surface passivation for measurement of millisecond carrier lifetimes in silicon wafers with different crystallographic orientations. Physica Status Solidi A, 216 (17). 1900257. doi:10.1002/pssa.201900257 ISSN 1862-6300.

Zhu, Yan, Rougieux, Fiacre, Grant, Nicholas E., Mullins, Jack, De Guzman, Joyce Ann, Murphy, John D., Markevich, Vladimir P., Coletti, Gianluca, Peaker, Anthony R. and Hameiri, Ziv (2019) New insights into the thermally activated defects in n-type float-zone silicon. AIP Conference Proceedings, 2147 (1). 140014 . doi:10.1063/1.5123901 ISSN 0094-243X.

Pointon, A. I., Grant, Nicholas E., Bonilla, R. S., Wheeler-Jones, Evé, Walker, Marc, Wilshaw, P. R., Dancer, Claire E. J. and Murphy, John D. (2019) Exceptional surface passivation arising from bis(trifluoromethanesulfonyl)-based solutions. ACS Applied Electronic Materials, 1 (7). pp. 1322-1329. doi:10.1021/acsaelm.9b00251 ISSN 2637-6113.

Murphy, John D., Pointon, A. I., Grant , Nicholas E., Shah, V. A., Myronov, Maksym, Voronkov, Vladimir V. and Falster, R. J. (2019) Data for Minority carrier lifetime in indium doped silicon for photovoltaics. [Dataset]

Al-Amin, Mohammad, Grant, Nicholas E., Pointon, A. I. and Murphy, J. D. (2019) Data for Iodine-ethanol surface passivation for measurement of millisecond carrier lifetimes in silicon wafers with different crystallographic orientations. [Dataset]

Wu, M. , Murphy, J. D., J. Jiang, J., Wilshaw, P. R. and Wilkinson, A. J. (2019) Microstructural evolution of mechanically deformed polycrystalline silicon for kerfless photovoltaics. Physica Status Solidi A, 216 (10). 1800578. doi:10.1002/pssa.201800578 ISSN 1862-6300.

Pointon, A. I., Grant , Nicholas E., Bonilla, R. S., Wheeler-Jones, Evé, Walker, Marc, Wilshaw, P. R., Dancer, Claire E. J. and Murphy, John D. (2019) Data for Exceptional surface passivation arising from bis(trifluoromethanesulfonyl)-based solutions. [Dataset]

Bothe, Karsten, Herlufsen, Sandra and Murphy, John D. (2019) Impact of iron on the room temperature luminescence efficiency of oxygen-containing precipitates in silicon. Semiconductor Science and Technology, 34 . 035030. doi:10.1088/1361-6641/ab0518 ISSN 0268-1242.

Bothe, Karsten, Herlufsen, Sandra and Murphy, John D. (2019) Data for Impact of iron on the room temperature luminescence efficiency of oxygen-containing precipitates in silicon. [Dataset]

2018

Murphy, John D. (2018) Materials Research for Group IV Semiconductors : Growth, characterization and technological developments III. In: Materials research for group IV semiconductors: growth, characterization and technological developments III, Strasbourg, France, 18/06/2018 - 22/06/2018

Niewelt, T., Richter, A., Kho, T. C., Grant, Nicholas E., Bonilla, R. S., Steinhauser, B., Polzin, J.-I., Feldmann, F., Hermle, M., Murphy, John D., Phang, S. P., Kwapil, W. and Schubert, M. C. (2018) Taking monocrystalline silicon to the ultimate lifetime limit. Solar Energy Materials and Solar Cells, 185 . pp. 252-259. doi:10.1016/j.solmat.2018.05.040 ISSN 0927-0248.

Pointon, A. I., Grant, Nicholas E., Wheeler-Jones, Evé, Altermatt, P. P. and Murphy, J. D. (2018) Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materials. Solar Energy Materials and Solar Cells, 183 . pp. 164-172. doi:10.1016/j.solmat.2018.03.028 ISSN 0927-0248.

Wu, M., Murphy, John D., Jiang, J., Wilshaw, P. R. and Wilkinson, A. J. (2018) Data for Microstructural evolution of mechanically deformed polycrystalline silicon for kerfless photovoltaics. [Dataset]

Mullins, Jack, Markevich, Vladimir P., Vaqueiro-Contreras, Michelle, Grant, Nicholas E., Jensen, Leif, Jabłoński, Jarosław , Murphy, John D., Halsall, Matthew P. and Peaker, Anthony R. (2018) Thermally activated defects in float zone silicon : effect of nitrogen on the introduction of deep level states. Journal of Applied Physics, 124 (3). 035701. doi:10.1063/1.5036718 ISSN 1089-7550.

Rahman, T., To, A., Pollard, M. E., Grant, Nicholas E., Colwell, J., Payne, D. N. R., Murphy, John D., Bagnall, D. M., Hoex, B. and Boden, S. A. (2018) Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cell. Progress in Photovoltaics, 26 (1). pp. 38-47. doi:10.1002/pip.2928 ISSN 1062-7995.

Pointon, A. I., Grant, Nicholas E., Wheeler-Jones, Evé, Altermatt, P. P. and Murphy, John D. (2018) Data for Superacid-derived surface passivation for measurement of ultra-long lifetimes in silicon photovoltaic materials. [Dataset]

2017

Al-Amin, Mohammad and Murphy, John D. (2017) Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon. IEEE Journal of Photovoltaics, 7 (6). 1519 -1527. doi:10.1109/JPHOTOV.2017.2741100 ISSN 2156-3381.

Grant, Nicholas E. and Murphy, John D. (2017) Temporary surface passivation for characterisation of bulk defects in silicon : a review. Physica Status Solidi Rapid Research Letters, 11 (11). 1700243. doi:10.1002/pssr.201700243 ISSN 1862-6270.

Grant, Nicholas E., Niewelt, Tim, Wilson, Neil R., Wheeler-Jones, Evé, Bullock, James, Al-Amin, Mohammad, Schubert, Martin C., van Veen, André C., Javey, Ali and Murphy, John D. (2017) Superacid-treated silicon surfaces : extending the limit of carrier lifetime for photovoltaic applications. IEEE Journal of Photovoltaics, 7 (6). pp. 1574-1583. doi:10.1109/JPHOTOV.2017.2751511 ISSN 2156-3381.

Al-Amin, Mohammad, Grant, Nicholas E. and Murphy, John D. (2017) Low-temperature saw damage gettering to improve minority carrier lifetime in multicrystalline silicon. Physica Status Solidi Rapid Research Letters, 11 (10). 1700268. ISSN 1862-6270.

Grant, Nicholas E., Niewelt, Tim, Wilson, Neil R., Wheeler-Jones, Evé, Bullock, James, Al-Amin, Mohammad, Schubert, Martin C., van Veen, André C., Javey, Ali and Murphy, John D. (2017) Data for Superacid-Treated Silicon Surfaces: Extending the Limit of Carrier Lifetime for Photovoltaic Applications. [Dataset]

Al-Amin, Mohammad, Grant, Nicholas E. and Murphy, John D. (2017) Data for Low-temperature saw damage gettering to improve minority carrier lifetime in multicrystalline silicon. [Dataset]

Al-Amin, Mohammad and Murphy, John D. (2017) Data for Combining low-temperature gettering with phosphorus diffusion gettering for improved multicrystalline silicon. [Dataset]

Mullins, J., Leonard, S., Markevich, V. P., Hawkins, I. D., Santos, P., Coutinho, J., Marinopoulos, A., Murphy, John D., Halsall, M. P. and Peaker, A. R. (2017) Recombination via transition metals in solar silicon : the significance of hydrogen-metal reactions and lattice sites of metal atoms. Physica Status Solidi A, 214 (7). 1700304. doi:10.1002/pssa.201700304 ISSN 1862-6300.

Niewelt, T., Selinger, M., Grant, Nicholas E., Kwapil, W. M., Murphy, John D. and Schubert, M. C. (2017) Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon. Journal of Applied Physics, 121 (18). 185702. ISSN 0021-8979.

Al-Amin, Mohammad and Murphy, John D. (2017) Passivation effects on low-temperature gettering in multicrystalline silicon. IEEE Journal of Photovoltaics, 7 (1). pp. 68-77. ISSN 2156-3381.

2016

Liu, A. Y., Sun, C., Markevic, V. P., Peaker, A. R., Murphy, John D. and Macdonald, D. (2016) Gettering of interstitial iron in silicon by plasma enhanced chemical vapour deposited silicon nitride films. Journal of Applied Physics, 120 (19). 193103. doi:10.1063/1.4967914 ISSN 0021-8979.

Al-Amin, Mohammad and Murphy, John D. (2016) Hydrogenation effect on low temperature internal gettering in multicrystalline silicon. In: 43rd IEEE Photovoltaic Specialists Conference, Portland, Oregon, USA, 5-10 Jun 2016. Published in: Proceedings of the 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) 0585-0590. ISBN 9781509027255.

Grant, Nicholas E., Markevich, Vladimir, Mullins, Jack, Peaker, Anthony R., Rougieux, Fiacre E., Macdonald, Daniel and Murphy, John D. (2016) Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon. Physica Status Solidi A, 213 (11). pp. 2844-2849. doi:10.1002/pssa.201600360 ISSN 1862-6300.

Al-Amin, Mohammad and Murphy, John D. (2016) Data for Passivation effects on low temperature gettering in multicrystalline silicon. [Dataset]

Al-Amin, Mohammad and Murphy, John D. (2016) Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering. Journal of Applied Physics, 119 (23). 235704. doi:10.1063/1.4954010 ISSN 0021-8979.

Al-Amin, Mohammad and Murphy, John D. (2016) Data for Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering. [Dataset]

Al-Amin, Mohammad and Murphy, John D. (2016) Low temperature internal gettering of bulk defects in silicon photovoltaic materials. Solid State Phenomena, 242 . pp. 109-119. doi:10.4028/www.scientific.net/SSP.242.109 ISSN 1662-9779.

2015

Murphy, John D., Al-Amin, Mohammad, Bothe, K., Olmo, M., Voronkov, V. V. and Falster, R. J. (2015) The effect of oxide precipitates on minority carrier lifetime in n-type silicon. Journal of Applied Physics, 118 . 215706. doi:10.1063/1.4936852 ISSN 0021-8979.

Murphy, John D. (2015) Data for The effect of oxide precipitates on minority carrier lifetime in n-type silicon. [Dataset]

Leonard, S., Markevich, V. P., Peaker, A. R., Hamilton, B. and Murphy, John D. (2015) Evidence for an iron-hydrogen complex in p-type silicon. Applied Physics Letters, 107 (3). 032103. doi:10.1063/1.4927323 ISSN 0003-6951.

Rougieux, Fiacre E., Grant, Nicholas E., Barugkin, Chug, Macdonald, Daniel and Murphy, John D. (2015) Influence of annealing and bulk hydrogenation on lifetime-limiting defects in nitrogen-doped floating zone silicon. IEEE Journal of Photovoltaics, 5 (2). pp. 495-498. doi:10.1109/JPHOTOV.2014.2367912

Rougieux, Fiacre E., Grant, Nicholas E., Macdonald, Daniel and Murphy, John D. (2015) Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon? In: 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC), New Orleans, LA, USA, 14 -19 Jun 2015. Published in: 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) pp. 1-4. doi:10.1109/PVSC.2015.7355687

2014

Murphy, John D., McGuire, R. E., Bothe, K., Voronkov, V. V. and Falster, R. J. (2014) Competitive gettering of iron in silicon photovoltaics : oxide precipitates versus phosphorus diffusion. Journal of Applied Physics, Volume 116 (Number 5). Article number 053514. doi:10.1063/1.4892015 ISSN 0021-8979.

Blum, Adrienne L., Swirhun, James S., Sinton, Ronald A., Yan, Fei, Herasimenka, Stanislau, Roth, Thomas, Lauer, Kevin, Haunschild, Jonas, Lim, Bianca, Bothe, Karsten, Hameiri, Ziv, Seipel, Bjoern, Xiong, Rentian, Dhamrin, Marwan and Murphy, John D. (2014) Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime. IEEE Journal of Photovoltaics, 4 (1). pp. 525-531. doi:10.1109/JPHOTOV.2013.2284375 ISSN 2156-3381.

Murphy, John D., McGuire, R. E., Bothe, Karsten, Voronkov, V. V. and Falster, Robert J. (2014) Minority carrier lifetime in silicon photovoltaics : the effect of oxygen precipitation. Solar Energy Materials and Solar Cells, Volume 120 (Part A). pp. 402-411. doi:10.1016/j.solmat.2013.06.018 ISSN 0927-0248.

2013

Murphy, John D., Bothe, K., Voronkov, V. V. and Falster, R. J. (2013) On the mechanism of recombination at oxide precipitates in silicon. Applied Physics Letters, Vol.102 (No.4). Article no. 042105. doi:10.1063/1.4789858 ISSN 0003-6951.

Martins, G. F., Thompson, A. J. R., Goller, B., Kovalev, D. and Murphy, John D. (2013) Fabrication of ‘finger-geometry’ silicon solar cells by electrochemical anodisation. Journal of Materials Science, Vol.48 (No.7). pp. 2977-2985. doi:10.1007/s10853-012-7075-x ISSN 0022-2461.

Murphy, John D., Bothe, K., Krain, R., Voronkov, V. V. and Falster, R. J. (2013) (Invited) The impact of oxide precipitates on minority carrier lifetime in Czochralski silicon. ECS Transactions, Vol.50 (No.5). pp. 137-144. doi:10.1149/05005.0137ecst ISSN 1938-5862.

2012

Gregori, N. J., Murphy, John D., Sykes, J. M. and Wilshaw, P. R. (2012) Chemical etching to dissolve dislocation cores in multicrystalline silicon. Physica B: Condensed Matter, Vol.407 (No.15). pp. 2970-2973. doi:10.1016/j.physb.2011.07.049 ISSN 0921-4526.

Murphy, John D., Bothe, K., Krain, R., Voronkov, V. V. and Falster, R. J. (2012) Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics : an application to oxide precipitates in silicon. Journal of Applied Physics, Vol.111 (No.11). Article no. 113709. doi:10.1063/1.4725475 ISSN 0021-8979.

Bothe, K., Falster, R. J. and Murphy, John D. (2012) Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates. Applied Physics Letters, Vol.101 (No.3). Article no.032107. doi:10.1063/1.4737175 ISSN 0003-6951.

Lang, V., Murphy, John D., Falster, R. J. and Morton, J. J. L. (2012) Spin-dependent recombination in Czochralski silicon containing oxide precipitates. Journal of Applied Physics, Vol.111 (No.1). Article no. 013710. doi:10.1063/1.3675449 ISSN 0021-8979.

Murphy, John D. and Falster, Robert J. (2012) The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 °C. Journal of Applied Physics, Vol.112 (No.11). Article no. 113506. doi:10.1063/1.4767378 ISSN 0021-8979.

2011

Murphy, John D. and Falster, Robert J. (2011) Contamination of silicon by iron at temperatures below 800°C. Physica Status Solidi. Rapid Research Letters, Vol.5 (No.10-11). pp. 370-372. doi:10.1002/pssr.201105388 ISSN 1862-6254.

Murphy, John D., Bothe, Karsten, Krain, Rafael, Olmo, Massimiliano, Voronkov, Vladimir V. and Falster, Robert J. (2011) Recombination at oxide precipitates in silicon. Solid State Phenomena, Vol.178-179 . pp. 205-210. doi:10.4028/www.scientific.net/SSP.178-179.205 ISSN 1662-9779.

Zeng, Zhidan, Murphy, John D., Falster, Robert J., Ma, Xiangyang, Yang, Deren and Wilshaw, P. R. (2011) The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon. Journal of Applied Physics, Vol.109 (No.6). Article no. 063532. doi:10.1063/1.3555625 ISSN 0021-8979.

Murphy, John D., Bothe, K., Olmo, M., Voronkov, V. V. and Falster, R. J. (2011) The effect of oxide precipitates on minority carrier lifetime in p-type silicon. Journal of Applied Physics, Vol.110 (No.5). Article no. 053713. doi:10.1063/1.3632067 ISSN 0021-8979.

2010

Murphy, John D., Bothe, Karsten, Olmo, Massimiliano., Voronkov, Vladimir V. and Falster, Robert J. (2010) Minority carrier lifetime in Czochralski silicon containing oxide precipitates. In: 218th ECS Meeting: High Purity Silicon 11, Las Vegas, Nevada, USA, 10-15 Oct 2010. Published in: ECS Transactions, Vol.33 (No.11). pp. 121-132. doi:10.1149/1.3485687 ISSN 1938-5862.

Wang, Y., Murphy, John D. and Wilshaw, P. R. (2010) Determination of grain orientations in multicrystalline silicon by reflectometry. Journal of The Electrochemical Society, Vol.157 (No.9). H884-H890. doi:10.1149/1.3458862 ISSN 0013-4651.

2009

Murphy, John D., Wilkinson, A. J. and Roberts, S. G. (2009) Characterisation of plastic zones around crack-tips in pure single-crystal tungsten using electron backscatter diffraction. IOP Conference Series: Materials Science and Engineering, Vol.3 . Article no.012015. doi:10.1088/1757-899X/3/1/012015 ISSN 1757-899X.

Alpass, C. R., Jain, A., Murphy, John D. and Wilshaw, P. R. (2009) Measurements of dislocation locking by near-surface ion-implanted nitrogen in czochralski silicon. Journal of The Electrochemical Society, Vol.156 (No.8). H669-H673. doi:10.1149/1.3151813 ISSN 0013-4651.

Halliday, F. M., Armstrong, David E. J., Murphy, John D. and Roberts, Steve G. (2009) Nanoindentation and micromechanical testing of iron-chromium alloys implanted with iron ions. Advanced Materials Research, Vol.59 . pp. 304-307. doi:10.4028/www.scientific.net/AMR.59.304 ISSN 1022-6680.

Alpass, C. R., Murphy, John D., Falster, R. J. and Wilshaw, P. R. (2009) Nitrogen diffusion and interaction with dislocations in single-crystal silicon. Journal of Applied Physics, Vol.105 (No.1). Article no.013519. doi:10.1063/1.3050342 ISSN 0021-8979.

Alpass, C. R., Murphy, John D., Falster, R. J. and Wilshaw, P. R. (2009) Nitrogen in silicon : diffusion at 500–750°C and interaction with dislocations. Materials Science and Engineering: B , Vol.159-160 . pp. 95-98. doi:10.1016/j.mseb.2008.09.004 ISSN 0921-5107.

Mansfield, B. R., Armstrong, David E. J., Wilshaw, Peter R. and Murphy, John D. (2009) An investigation into fracture of multi-crystalline silicon. Solid State Phenomena, Vol.156-158 . pp. 55-60. doi:10.4028/www.scientific.net/SSP.156-158.55 ISSN 1662-9779.

Murphy, John D., Giannattasio, A., Yao, Z., Hetherington, C. J. D., Nellist, P. D. and Roberts, S. G. (2009) The mechanical properties of tungsten grown by chemical vapour deposition. Journal of Nuclear Materials, Vol.386-388 . pp. 583-586. doi:10.1016/j.jnucmat.2008.12.182 ISSN 0022-3115.

2008

Alpass, Charles, Murphy, John D., Jain, Amitabh and Wilshaw, Peter R. (2008) Measurements of dislocation locking by near-surface ion implanted nitrogen in Czochralski silicon. In: 214th ECS Meeting, Honolulu, HI, 12-17 Oct 2008. Published in: ESC Transactions, Vol.16 (No.6). pp. 249-259. ISBN 1938-6737. doi:10.1149/1.2980308

2007

Alpass, C. R., Murphy, John D., Giannattasio, A., Senkader, S., Falster, R. J. and Wilshaw, P. R. (2007) Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking. Physica Status Solidi. A: Applications and Materials Science, Vol.204 (No.7). pp. 2256-2260. doi:10.1002/pssa.200675457 ISSN 1862-6300.

2006

Murphy, John D., Wilshaw, P. R., Pygall, B. C., Senkader, S. and Falster, R. J. (2006) Enhanced oxygen diffusion in highly doped p-type Czochralski silicon. Journal of Applied Physics, Vol.100 (No.10). Article no.103531. doi:10.1063/1.2369536 ISSN 0021-8979.

Murphy, John D., Alpass, C. R., Giannattasio, A., Senkader, S., Falster, R. J. and Wilshaw, P. R. (2006) Nitrogen in silicon : transport and mechanical properties. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol.253 (No.1-2). pp. 113-117. doi:10.1016/j.nimb.2006.10.023 ISSN 0168-583X.

Murphy, John D., Alpass, Charles R., Giannattasio, Armando, Senkader, Semih, Emiroglu, Deniz, Evans-Freeman, Jan H., Falster, R. J. and Wilshaw, Peter R. (2006) Nitrogen-doped silicon : mechanical, transport and electrical properties. In: 210th ECS Meeting, Cancun, Mexico, 29 Oct - 3 Nov 2006. Published in: ECS Transactions, Vol.3 (No.4). pp. 239-253. doi:10.1149/1.2355760 ISSN 1938-5862.

Murphy, John D., Senkader, S., Falster, R. J. and Wilshaw, P. R. (2006) Oxygen transport in Czochralski silicon investigated by dislocation locking experiments. Materials Science and Engineering : B, Vol.134 (No.2-3). pp. 176-184. doi:10.1016/j.mseb.2006.06.045 ISSN 0921-5107.

2005

Evans-Freeman, J. H., Emiroglu, D., Vernon-Parry, K. D., Murphy, John D. and Wilshaw, P. R. (2005) High resolution deep level transient spectroscopy applied to extended defects in silicon. Journal of Physics: Condensed Matter, Vol.17 (No.22). S2219-S2227. doi:10.1088/0953-8984/17/22/009 ISSN 0953-8984.

Murphy, John D., Giannattasio, A., Senkader, S., Falster, R. J. and Wilshaw, P. R. (2005) Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments. Physica Status Solidi. A: Applications and Materials Science, Vol.202 (No.5). pp. 926-930. doi:10.1002/pssa.200460532 ISSN 1862-6300.

Giannattasio, A., Murphy, John D., Senkader, S., Falster, R. J. and Wilshaw, P. R. (2005) Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments. Journal of The Electrochemical Society, Vol.152 (No.6). G460-G467. doi:10.1149/1.1901669 ISSN 0013-4651.

Murphy, John D., Giannattasio, A., Alpass, Charles R., Senkader, Semih, Falster, Robert and Wilshaw, Peter R. (2005) The influence of nitrogen on dislocation locking in float-zone silicon. Solid State Phenomena, Vol.108-109 . pp. 139-144. doi:10.4028/www.scientific.net/SSP.108-109.139 ISSN 1662-9779.